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VS-30CTQ045-N3

P1-P3P4-P6P7-P7
VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
1
Document Number: 94187
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 15 A
FEATURES
• 175 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 15 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.56 V
I
RM
max. 15 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
20 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 30 A
V
RRM
35 to 45 V
I
FSM
t
p
= 5 μs sine 1060 A
V
F
15 A
pk
, T
J
= 125 °C (per leg) 0.56 V
T
J
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
30CTQ035PbF
VS-
30CTQ035-N3
VS-
30CTQ040PbF
VS-
30CTQ040-N3
VS-
30CTQ045PbF
VS-
30CTQ045-N3
UNITS
Maximum DC
reverse voltage
V
R
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 127 °C, rectangular waveform 30
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1060
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.0 A
VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
2
Document Number: 94187
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.62
V
30 A 0.76
15 A
T
J
= 125 °C
0.56
30 A 0.70
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2
mA
T
J
= 125 °C 15
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
3.25
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.63
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2.0 g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
30CTQ035
30CTQ040
30CTQ045
VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
3
Document Number: 94187
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
0 0.8 1.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.4 1.6
1000
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2 0.6 1.0 1.4
1.8
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
525354515
1000
10 20 30 40
T
J
= 25 °C
0.0001
T
J
= 50 °C
T
J
= 150 °C
T
J
= 75 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 175 °C
1000
020 50
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10 30 40
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P1-P3P4-P6P7-P7

VS-30CTQ045-N3

Mfr. #:
Buy VS-30CTQ045-N3
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers Schottky - TO-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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