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IRLML6401TRPBF

P1-P3P4-P6P7-P9
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0 4 8 12 16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.3A
V =-10V
DS
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
-1.9A
-3.4A
-4.3A
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0 10203040
-I
D
, Drain Current ( A )
0.00
0.05
0.10
0.15
0.20
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
VGS = -4.5V
VGS = -2.5VVGS = -1.8V
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.3
0.4
0.5
0.6
0.7
0.8
-
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= -250μA
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-V
GS,
Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
Ω
)
Id = -4.3A
P1-P3P4-P6P7-P9

IRLML6401TRPBF

Mfr. #:
Buy IRLML6401TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Lifecycle:
New from this manufacturer.
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