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TK100E08N1,S1X

P1-P3P4-P6P7-P9
TK100E08N1
4
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 6)
(Note 6)
(Note 7)
(Note 7)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 100 A, V
GS
= 0 V
I
DR
= 100 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
Typ.
93
190
Max
100
568
-1.2
Unit
A
V
ns
nC
Note 6: Ensure that the channel temperature does not exceed 150.
Note 7: Ensure that V
DS
peak does not exceed V
DSS
.
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2014-06-30
Rev.4.0
TK100E08N1
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
V
DS
DS
DS
DS
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
2014-06-30
Rev.4.0
TK100E08N1
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 P
P
P
P
D
D
D
D
- T
- T
- T
- T
c
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
2014-06-30
Rev.4.0
P1-P3P4-P6P7-P9

TK100E08N1,S1X

Mfr. #:
Buy TK100E08N1,S1X
Manufacturer:
Toshiba
Description:
MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
Lifecycle:
New from this manufacturer.
Delivery:
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