MBR360RL

© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
1 Publication Order Number:
MBR350/D
MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Extremely Low v
F
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR350
MBR360
V
RRM
V
RWM
V
R
50
60
V
Average Rectified Forward Current T
A
= 65°C
(R
q
JA
= 28°C/W, P.C. Board Mounting)
I
O
3.0 A
Non−Repetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, T
L
= 75°C)
I
FSM
80 A
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
T
J
, T
stg
−65 to
+150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
(see Note 4 − Mounting Data, Mounting Method 3)
R
q
JA
28 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
A
MBR
3x0G
G
A = Assembly Location
x = 5 or 6
G = Pb−Free Package
(Note: Microdot may be in either location
)
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MBR350, MBR360
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted) (Note 2)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
v
F
0.600
0.740
1.080
V
Maximum Instantaneous Reverse Current @ Rated DC Voltage (Note 3)
T
L
= 25°C
T
L
= 100°C
i
R
0.60
20
mA
2. Lead Temperature reference is cathode lead 1/32 in from case.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
T
A
, AMBIENT TEMPERATURE (C°)
20 1006040 80
4.0
2.0
3.0
5.0
0
1.0
DC
SQUARE
WAVE
120 140 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
V
R
REVERSE VOLTAGE (VOLTS)
02010 30 40
0.002
0.005
0.01
0.05
0.02
0.10
0.50
0.20
20
10
5.0
2.0
1.0
25°C
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.20 0.4
5.0
0.03
0.02
0.07
0.2
0.1
20
10
3.0
2.0
1.0
0.6 0.8
0.3
0.05
0.5
0.7
I , REVERSE CURRENT (mA)
R
7.0
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.0 1.2 1.4
*The curves shown are typical for the highest
voltage device in the voltage grouping. Typical
reverse current for lower voltage selections can
be estimated from these same curves if V
R
is
sufficiently below rated V
R
.
50 60 80
75°C
100°C
T
J
= 150°C
T
J
= 100°C 25°C
75°C
T
J
= 150°C
RATED V
R
R
q
JA
= 28°C/W
0
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating Ambient
(Mounting Method 3 per Note 4)
MBR350, MBR360
http://onsemi.com
3
V
R
, REVERSE VOLTAGE (VOLTS)I
F
(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0 2.01.0 3.0 4.0 5.0
1.0
2.0
3.0
4.0
5.0
T
J
= 150°C
P , AVERAGE POWER DISSIPATION (WATTS)
F (AV)
dc
SQUARE
WAVE
02010 30 40 50
70
300
T
J
= 25°C
C, CAPACITANCE (pF)
200
40
30
50
100
Figure 4. Power Dissipation Figure 5. Typical Capacitance
0
TYPICAL VALUES FOR R
q
JA
IN STILL AIR
Data shown for thermal resistance, junction−to−ambient (R
qJA
) for the mountings shown is to be used as
typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4
R
q
JA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 4 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
L L
L
Mounting Method 2
Vector Push−In Terminals T−28
L
Mounting Method 3
P.C. Board with 2−1/2 in X 2−1/2 in
copper surface.
L = 1/2’
Board Ground Plane
ORDERING INFORMATION
Device Package Shipping
MBR350RL Axial Lead 1500 Units / Tape & Reel
MBR350RLG Axial Lead
(Pb−Free)
1500 Units / Tape & Reel
MBR360 Axial Lead 500 Units / Bag
MBR360G Axial Lead
(Pb−Free)
500 Units / Bag
MBR360RL Axial Lead 1500 Units / Tape & Reel
MBR360RLG Axial Lead
(Pb−Free)
1500 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

MBR360RL

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
DIODE SCHOTTKY 60V 3A DO201AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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