TSM60NB099CF C0G Datasheet TSM60NB099CF C0G | P1-P3

TSM60NB099CF

Taiwan Semiconductor

1 Version: A1705

N-Channel Power MOSFET

600V, 38A, 99mΩ

FEATURES

● Super-Junction technology

● High performance, small R

DS(ON)

*Q

g

figure of merit (FOM)

● High ruggedness performance

● 100% UIS and R

g

tested

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● PFC stage

● Server/Telecom Power

● Charging Station

● Inverter

● Power Supply

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

600

V

R

DS(on)

(max)

99

mΩ

Q

g

62

nC

ITO-220S

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

600

V

Gate-Source Voltage

V

GS

±30

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

38

A

T

C

= 100°C

24

A

Pulsed Drain Current

(Note 2)

I

DM

114

A

Total Power Dissipation @ T

C

= 25°C

P

D

69

W

Single Pulse Avalanche Energy

(Note 3)

E

AS

784

mJ

Single Pulse Avalanche Current

(Note 3)

I

AS

5.6

A

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

R

ӨJC

1.8

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

62

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design.

TSM60NB099CF

Taiwan Semiconductor

2 Version: A1705

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

600

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

2

3

4

V

Gate Body Leakage

V

GS

= ±30V, V

DS

= 0V

I

GSS

--

±100

nA

Zero Gate Voltage Drain Current

V

DS

= 600V, V

GS

= 0V

I

DSS

--

1

µA

Drain-Source On-State Resistance

(Note 4)

V

GS

= 10V, I

D

= 5.3A

R

DS(on)

--

81

99

mΩ

Dynamic

(Note 5)

Total Gate Charge

V

DS

= 480V, I

D

= 16A,

V

GS

= 10V

Q

g

--

62

--

nC

Gate-Source Charge

Q

gs

--

15

--

Gate-Drain Charge

Q

gd

--

26

--

Input Capacitance

V

DS

= 100V,V

GS

= 0V,

f = 1.0MHz

C

iss

--

2587

--

pF

Output Capacitance

C

oss

--

123

--

Reverse Transfer Capacitance

C

rss

--

20

--

Gate Resistance

f = 1.0MHz

R

g

--

3.3

6.6

Ω

Switching

(Note 6)

Turn-On Delay Time

V

DD

= 300V,

R

GEN

= 5Ω,

I

D

= 8A, V

GS

= 10V,

t

d(on)

--

16

--

ns

Turn-On Rise Time

t

r

--

21

--

Turn-Off Delay Time

t

d(off)

--

84

--

Turn-Off Fall Time

t

f

--

21

--

Source-Drain Diode

Body-Diode Continuous Forward Current

I

S

--

38

A

Body-Diode Pulsed Current

I

SM

--

114

A

Forward Voltage

(Note 4)

I

S

= 16A, V

GS

= 0V

V

SD

--

1.4

V

Reverse Recovery Time

I

S

= 8A

dI

F

/dt = 100A/μs

t

rr

--

265

--

ns

Reverse Recovery Charge

Q

rr

--

3.3

--

μC

Notes:

1. Current limited by package.

2. Pulse width limited by the maximum junction temperature.

3. L = 50mH, I

AS

= 5.6A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM60NB099CF C0G

ITO-220S

50pcs / Tube

TSM60NB099CF

Taiwan Semiconductor

3 Version: A1705

CHARACTERISTICS CURVES

(T

C

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

I

D

, Drain Current (A)

I

D

, Drain Current (A)

V

DS

, Drain to Source Voltage (V)

V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

V

GS

, Gate to Source Voltage (V)

R

DS(on)

, Drain-Source On-Resistance (Ω)

I

D

, Drain Current (A)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

V

GS

, Gate to Source Voltage (V)

R

DS(on)

, Drain-Source On-Resistance (Ω)

0

0.5

1

1.5

2

2.5

3

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=10V

I

D

=5.3A

0

9

18

27

36

45

0 2 4 6 8

V

GS

=10V

V

GS

=9V

V

GS

=8V

V

GS

=7V

V

GS

=6V

V

GS

=5V

0

0.04

0.08

0.12

0.16

0.2

0 9 18 27 36 45

V

GS

=10V

0

0.05

0.1

0.15

0.2

0.25

0.3

5 6 7 8 9 10

I

D

=5.3A

0

9

18

27

36

45

0 2 4 6 8

25℃

-55℃

150℃

0

2

4

6

8

10

0 10 20 30 40 50 60 70

V

DS

=480V

I

D

=16A

TSM60NB099CF C0G

TSM60NB099CF C0G

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