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PSMN3R0-30YL,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PSMN3R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 6 of 15
NXP Semiconductors
PSMN3R0-30YL
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 30--V
I
D
= 250 µA; V
GS
=0V; T
j
=-55°C27--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 11; see Figure 12
1.3 1.7 2.15 V
I
D
=1mA; V
DS
=V
GS
; T
j
=150°C;
see Figure 12
0.65 - - V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 12
--2.45V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=30V; V
GS
=0V; T
j
= 150 °C - - 100 µA
I
GSS
gate leakage current V
GS
=16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
=15A; T
j
= 25 °C - 3.04 4.04 mΩ
V
GS
=10V; I
D
=15A; T
j
=150°C;
see Figure 13
--5.2mΩ
V
GS
=10V; I
D
=15A; T
j
= 25 °C - 2.19 3 mΩ
R
G
gate resistance f = 1 MHz - 0.55 1.5 Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=10A; V
DS
=12V; V
GS
=10V;
see Figure 14; see Figure 15
- 45.8 - nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 43 - nC
I
D
=10A; V
DS
=12V; V
GS
=4.5V;
see Figure 14
-21-nC
Q
GS
gate-source charge I
D
=10A; V
DS
=12V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-7.02-nC
Q
GS(th)
pre-threshold gate-source
charge
-4.74-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-2.28-nC
Q
GD
gate-drain charge - 5.1 - nC
V
GS(pl)
gate-source plateau voltage V
DS
= 12 V; see Figure 14;
see Figure 15
-2.37-V
C
iss
input capacitance V
DS
=12V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see Figure 16
- 2822 - pF
C
oss
output capacitance - 615 - pF
C
rss
reverse transfer capacitance - 260 - pF
t
d(on)
turn-on delay time V
DS
=12V; R
L
=0.5Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω
-34-ns
t
r
rise time - 58 - ns
t
d(off)
turn-off delay time - 50 - ns
t
f
fall time - 21 - ns
PSMN3R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 7 of 15
NXP Semiconductors
PSMN3R0-30YL
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.82 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=20V
-35-ns
Q
r
recovered charge - 29 - nC
Table 6. Characteristics
…continued
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aac566
0
20
40
60
80
0.0 1.0 2.0 3.0
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
003aac567
0
20
40
60
80
100
120
140
160
0246810
V
DS
(V)
I
D
(A)
V
GS
(V) = 3.2
2.2
2.4
2.6
2.8
3
4.5
10
003aac570
2
4
6
8
0 20 40 60 80 100
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 3.2
4.5
10
003aac571
40
60
80
100
120
140
0204060
I
D
(A)
g
fs
(S)
PSMN3R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 8 of 15
NXP Semiconductors
PSMN3R0-30YL
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK
Fig 9. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
003aac574
0
1000
2000
3000
4000
5000
0246810
V
GS
(V)
C
(pF)
C
iss
C
rss
003aac569
2
3
4
357911
V
GS
(V)
R
DSon
(mΩ)
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
003aac337
0
1
2
3
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max
typ
min
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PSMN3R0-30YL,115

Mfr. #:
Buy PSMN3R0-30YL,115
Manufacturer:
Nexperia
Description:
MOSFET <=30V N CH TRENCHFET
Lifecycle:
New from this manufacturer.
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