©2001 Fairchild Semiconductor Corporation HRFZ44N Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55 V
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
49
160
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS 0.227 A
2
s
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.8
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
2. Repetitive rating: pulse width limited by maximum junction temperature.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250
µ
A, V
GS
= 0V (Figure 11) 55 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 50V, V
GS
= 0V - - 1
µ
A
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C - - 250
µ
A
Gate to Source Leakage Current I
GSS
V
GS
=
±
20V - -
±
100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 10) 2 - 4 V
Drain to Source On Resistance r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figure 9) - 0.019 0.022
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
θ
JC
(Figure 3) - - 1.25
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
TO-220 - - 62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time t
ON
V
DD
= 30V, I
D
≅
25A,
R
L
= 1.2
Ω
, V
GS
=
10V,
R
GS
= 9.1
Ω
- - 105 ns
Turn-On Delay Time t
d(ON)
-12- ns
Rise Time t
r
-58- ns
Turn-Off Delay Time t
d(OFF)
-33- ns
Fall Time t
f
-33- ns
Turn-Off Time t
OFF
- - 100 ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
≅
25A,
R
L
= 1.2
Ω
I
g(REF)
= 1.0mA
(Figure 13)
-6075nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 35 43 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 2.0 2.5 nC
Gate to Source Gate Charge Q
gs
-4-nC
Gate to Drain “Miller” Charge Q
gd
-14- nC
HRFZ44N
