June 2015
DocID025073 Rev 3
1/13
This is information on a product in full production.
www.st.com
STP160N3LL
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STP160N3LL 30 V 3.2 mΩ 120 A 136 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
Table 1: Device summary
Order code Marking Package Packing
STP160N3LL 160N3LL TO-220 Tube
Contents
STP160N3LL
DocID025073 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
STP160N3LL
Electrical ratings
DocID025073 Rev 3
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 30 V
V
GS
Gate-source voltage ±20 V
I
D
(1)
Drain current (continuous) at T
case
= 25 °C 120
A
I
D
Drain current (continuous) at T
case
= 100 °C 112
I
DM
(2)
Drain current (pulsed) 480
P
TOT
Total dissipation at T
case
= 25 °C 136 W
E
AS
(3)
Single pulse avalanche energy 150 mJ
T
stg
Storage temperature
55 to 175 °C
T
j
Operating junction temperature
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
starting T
j
= 25 °C, I
D
= 40 A
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.1
°C/W
R
thj-amb
Thermal resistance junction-ambient 62.5

STP160N3LL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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