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NSV60600MZ4T3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 5
1 Publication Order Number:
NSS60600MZ4/D
NSS60600MZ4
60 V, 6.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• Complementary to NSS60601MZ4
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
−60 Vdc
Collector-Base Voltage V
CBO
−100 Vdc
Emitter-Base Voltage V
EBO
−6.0 Vdc
Collector Current − Continuous I
C
−6.0 A
Collector Current − Peak I
CM
−12.0 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
C 2, 4
B 1 E 3
Top View Pinout
C
CEB
4
123
PIN ASSIGNMENT
1
60600G
AYW
A = Assembly Location
Y = Year
W = Work Week
60600 = Specific Device Code
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
2
3
4
NSS60600MZ4
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
800
6.5
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
155
°C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
2
15.6
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3) 710
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ 7.6 mm
2
, 1 oz. copper traces.
2. FR−4 @ 645 mm
2
, 1 oz. copper traces.
3. Thermal response.
ORDERING INFORMATION
Device Package Shipping
†
NSS60600MZ4T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSV60600MZ4T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSS60600MZ4T3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
NSV60600MZ4T3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NSS60600MZ4
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= −10 mAdc, I
B
= 0) V
(BR)CEO
−60 − − Vdc
Collector−Base Breakdown Voltage (I
C
= −0.1 mAdc, I
E
= 0) V
(BR)CBO
−100 − − Vdc
Emitter−Base Breakdown Voltage (I
E
= −0.1 mAdc, I
C
= 0) V
(BR)EBO
−6.0 − − Vdc
Collector Cutoff Current (V
CB
= −100 Vdc, I
E
= 0) I
CBO
− − −0.1
mAdc
Emitter Cutoff Current (V
EB
= −6.0 Vdc) I
EBO
− − −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
(I
C
= −6.0 A, V
CE
= −2.0 V)
h
FE
150
120
100
70
−
−
−
−
−
360
−
−
−
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −2.0 mA)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
(I
C
= −3.0 A, I
B
= −60 mA)
(I
C
= −6.0 A, I
B
= −0.6 A)
V
CE(sat)
−
−
−
−
−
−
−0.050
−0.100
−
−
−0.050
−0.070
−0.120
−0.250
−0.350
V
Base−Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.1 A)
V
BE(sat)
− − −1.0
V
Base−Emitter Turn−on Voltage (Note 4)
(I
C
= −1.0 A, V
CE
= −2.0 V)
V
BE(on)
− − −0.900
V
Cutoff Frequency
(I
C
= −500 mA, V
CE
= −10 V, f = 1.0 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= 5.0 V, f = 1.0 MHz) Cibo − 360 − pF
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) Cobo − 60 − pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− 100 − ns
Rise (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− 180 − ns
Storage (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− 540 − ns
Fall (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− 145 − ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Figure 1. Power Derating
T
J
, TEMPERATURE (°C)
150100755025
0
0.5
1.0
1.5
2.0
2.5
P
D
, POWER DISSIPATION (W)
T
C
125
T
A
P1-P3P4-P6

NSV60600MZ4T3G

Mfr. #:
Buy NSV60600MZ4T3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT PNP LOW VCE(SAT)
Lifecycle:
New from this manufacturer.
Delivery:
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