Document Number: 91329
www.vishay.com
S11-1055-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRLZ44S, SiHLZ44S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
2
PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 179 μH, R
g
= 25 , I
AS
= 51 A (see fig. 12).
c. I
SD
51 A, dI/dt 250 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
f. Current limited by the package, (die current = 51 A).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
()V
GS
= 5.0 V 0.028
Q
g
(Max.) (nC) 66
Q
gs
(nC) 12
Q
gd
(nC) 43
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHLZ44S-GE3 SiHLZ44STRR-GE3
a
Lead (Pb)-free
IRLZ44SPbF IRLZ44STRRPbF
a
SiHLZ44S-E3 SiHLZ44STR-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current
f
V
GS
at 5.0 V
T
C
= 25 °C
I
D
50
A
Continuous Drain Current
T
C
= 100 °C 36
Pulsed Drain Current
a
I
DM
200
Linear Derating Factor 1.0
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
400 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
150
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c
dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
