©2008 Fairchild Semiconductor Corporation
F
DD8878 / FDU8878 Rev. A
4
www.
fairchildsemi.com
FDD8878 / FDU8878 N-Channel PowerTrench
®
MOSFET
2
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
40 A
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1) 36 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 52
o
C/W) 11 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 2) 25 mJ
P
D
Power dissipation 40 W
Derate above 25
o
C0.27W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-252, TO-251 3.75
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252, TO-251 100
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 52
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8878 FDD8878 TO-252AA 13” 12mm 2500 units
FDU8878 FDU8878 TO-251AA Tube N/A 75 units
F
F
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 30 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V - - 1
µA
V
GS
= 0V T
C
= 150
o
C- -250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA 1.2 - 2.5 V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 10V - 0.011 0.015
Ω
I
D
= 35A, V
GS
= 4.5V - 0.014 0.0185
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
- 0.018 0.024
