IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA340N04T4
IXTA340N04T4-7
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 115 195 S
C
iss
13 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1850 pF
C
rss
1226 pF
R
Gi
Gate Input Resistance 1.1
t
d(on)
23 ns
t
r
55 ns
t
d(off)
113 ns
t
f
40 ns
Q
g(on)
256 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
64 nC
Q
gd
86 nC
R
thJC
0.31C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 340 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1360 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
43 ns
I
RM
10
A
Q
RM
210 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
I
F
= 150A, V
GS
= 0V,
-di/dt = 100A/s,
V
R
= 30V
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be 5mm
or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
