VS-8ETU04S-M3, VS-8ETU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 96388
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors FRED Pt
®
series are the state of the
art ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
R
400 V
V
F
at I
F
0.94 V
t
rr
typ. 35 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
Base
cathode
2
N/C
Anode
1
3
2
N/C
V
S-8ETU04S-M3 VS-8ETU04-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
400 V
Average rectified forward current I
F(AV)
T
C
= 155 °C 8
ANon-repetitive peak surge current I
FSM
T
C
= 25 °C 100
Repetitive peak forward current I
FRM
16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 400 - -
V
Forward voltage V
F
I
F
= 8 A - 1.19 1.3
I
F
= 8 A, T
J
= 150 °C - 0.94 1.0
Reverse leakage current I
R
V
R
= V
R
rated - 0.2 10
μA
T
J
= 150 °C, V
R
= V
R
rated - 20 500
Junction capacitance C
T
V
R
= 400 V - 14 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-8ETU04S-M3, VS-8ETU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 96388
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 35 60
nsT
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-43-
T
J
= 125 °C - 67 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 60 -
nC
T
J
= 125 °C - 210 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction-to-case R
thJC
-1.82.0
°C/W
Thermal resistance, junction-to-ambient R
thJA
Typical socket mount - - 50
Thermal resistance, case-to-heatsink R
thCS
Mounting surface, flat, smooth,
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) 8ETU04S
Case style TO-262AA 8ETU04-1
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0 2.51.0 1.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
0.5 2.0
0.1
0.01
0.1
1
10
100
0 100 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.001
1000
300
0.0001
400
VS-8ETU04S-M3, VS-8ETU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 96388
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
0 100 200 300 400
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0246
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
81012
Square wave (D = 0.50)
Rated V
R
applied
02 6 1012
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
2
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
48
4
6
8
14
10
12
RMS limit

VS-8ETU04STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 400V 8A IF TO-220AC 100A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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