TA75W01FU
2014-03-01
2
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Supply voltage V
CC
, V
EE
±6 or 12 V
Differential input voltage DV
IN
±12 V
Input voltage V
IN
−0.3 to V
CC
V
Power dissipation P
D
250 mW
Operating temperature T
opr
−40 to 85 °C
Storage temperature T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(V
CC
= 5V, V
EE
= GND, Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Input offset voltage V
IO
1 R
g
≤10kΩ ― 2 7 mV
Input offset current I
IO
2 ― ― 5 50 nA
Input bias current I
I
2 ― ― 45 250 nA
Common mode input voltage CMV
IN
3 ― 0 ― V
CC
−1.5 V
Supply current I
CC
4 ― ― 0.7 1.2 mA
Voltage gain G
V
― R
L
≥2kΩ 86 100 ― dB
Maximum output voltage swing V
op-p
5 R
L
=2kΩ 0 ― 3.4 V
Common mode rejection ratio CMRR 3 ― 65 85 ― dB
Supply voltage rejection ratio SVRR ― R
g
=10kΩ 65 100 ― dB
Source current I
source
6 IN (−) = 0V, IN (+) = 1V 20 40 ― mA
Sink current I
sink
7 IN (−) = 1V, IN (+) = 0V 10 20 ― mA
Unity gain cross frequency f
T
― ― ― 0.3 ― MHz
