© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_60N10T(2V)8-07-08-A
IXTA60N10T
IXTP60N10T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
25
30
35
40
45
50
55
60
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 15Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
30
50
70
90
110
130
150
170
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
10A < I
D
< 30A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
33
34
35
36
37
38
39
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
44
48
52
56
60
64
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 15Ω, V
GS
= 10V
V
DS
= 50V
I
D
= 10A
I
D
= 30A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
32
33
34
35
36
37
38
39
40
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f
- Nanoseconds
35
39
43
47
51
55
59
63
67
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 15Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 15Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
30
40
50
60
70
80
90
100
110
120
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
50
65
80
95
110
125
140
155
170
185
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 10A, 30A
