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PMBFJ177,215

P1-P3P4-P6P7-P8
DATA SHEET
Product specification April 1995
DISCRETE SEMICONDUCTORS
PMBFJ174 to 177
P-channel silicon field-effect
transistors
April 1995 2
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
interchangeable.
Marking codes:
1 = drain
2 = source
3=gate
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM386
QUICK REFERENCE DATA
Drain-source voltage V
DS
max. 30 V
Gate-source voltage V
GSO
max. 30 V
Gate current I
G
max. 50 mA
Total power dissipation
up to T
amb
=25 CP
tot
max. 300 mW
Drain current
V
DS
=15 V; V
GS
=0
PMBFJ174 175 176 177
I
DSS
20
135
7
70
2
35
1.5
20
mA
mA
Drain-source ON-resistance
V
DS
= 0.1 V; V
GS
=0 R
DS on
85 125 250 300
April 1995 3
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
j
=25 C unless otherwise specified
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
Drain-source voltage V
DS
max. 30 V
Gate-source voltage V
GSO
max. 30 V
Gate-drain voltage V
GDO
max. 30 V
Gate current (d.c.) I
G
max. 50 mA
Total power dissipation
up to T
amb
=25 C
(1)
P
tot
max. 300 mW
Storage temperature range T
stg
65 to 150 C
Junction temperature T
j
max. 150 C
From junction to ambient in free air R
th j-a
=430K/W
PMBFJ174 175 176 177
Gate cut-off current
V
GS
=20 V; V
DS
=0 I
GSS
1111nA
Drain cut-off current
V
DS
= 15 V; V
GS
= 10 V I
DSX
1111nA
Drain current
20
135
7
70
2
35
1.5
20
mA
mA
V
DS
= 15 V; V
GS
=0 I
DSS
Gate-source breakdown voltage
I
G
=1 A; V
DS
=0 V
(BR)GSS
30 30 30 30 V
Gate-source cut-off voltage
5
10
3
6
1
4
0.8
2.25
V
V
I
D
= 10 nA; V
DS
= 15 V V
GS off
Drain-source ON-resistance
V
DS
= 0.1 V; V
GS
=0 R
DS on
85 125 250 300
P1-P3P4-P6P7-P8

PMBFJ177,215

Mfr. #:
Buy PMBFJ177,215
Manufacturer:
NXP Semiconductors
Description:
JFET JFET P-CH 30V 0.8mA
Lifecycle:
New from this manufacturer.
Delivery:
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