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Integrated Silicon Solution, Inc. — www.issi.com 13
Rev. B
07/29/2015
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Note: 1. Characterized but not 100% tested.
6\PERO 3DUDPHWHU &RQGLWLRQ 0LQ Typ 0D[ 8QLWV
ILI Input Leakage Current VIN= 0 V to V CC 1 μA
ILO Output Leakage Current VI/O = 0 V to V CC 1 μA
ISB1 VCC Standby Current
CMOS
CE#, OE# = V CC -0.3 V 0.1 5 μA
ISB2 VCC Standby Current TTL CE# = VIH to VCC 0.05 3 mA
ICC1 VCC Active Read Current I 0+],287 P$ 415 mA
ICC2(1) VCC Program/Erase Cur-
rent
820 mA
VIL Input Low Voltage -0.5 0.8 V
VIH Input High Voltage 0.7 VCC VCC + 0.3 V
VOL Output Low Voltage ,2/ P$
VCC = VCCmin
0.45 V
VOH Output High Voltage
IOH = -100 μ$
VCC = VCC min
VCC - 0.2 V
