SKP02N120
IFAG IPC TD VLS
1 Rev. 2.3 12.06.2013
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
40lower E
off
compared to previous generation
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C
E
off
T
j
Marking Package
SKP02N120 1200V 2A 0.11mJ
150C
K02N120 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
1200 V
DC collector current
T
C
= 25C
T
C
= 100C
I
C
6.2
2.8
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
9.6
Turn off safe operating area
V
CE
1200V, T
j
150C
-
9.6
Diode forward current
T
C
= 25C
T
C
= 100C
I
F
4.5
2
Diode pulsed current, t
p
limited by T
jmax
I
Fp ul s
9
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2
V
GE
= 15V, 100VV
CC
1200V, T
j
150C
t
SC
10
s
Power dissipation
T
C
= 25C
P
tot
62 W
Operating junction and storage temperature
T
j
, T
st g
-55...+150
C
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
s
260
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
(TO-220AB)
G
C
E