FEP6AT-E3/45

FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88598
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Rectifier
FEATURES
Power pack
Glass passivated pellet chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
6.0 A
V
RRM
50 V to 200 V
I
FSM
75 A
t
rr
35 ns
V
F
0.975 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
FEP6xT Series
ITO-220AB
FEPB6xT Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
FEPF6xT Series
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
1
2
K
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current at T
C
= 105 °C I
F(AV)
6.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
75 A
Operating storage and temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88598
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT
Maximum instantaneous forward voltage per
diode
3.0 A V
F
(1)
0.975 V
Maximum DC reverse current
at rated DC blocking voltage per diode
T
C
= 25 °C
I
R
5.0
μA
T
C
= 100 °C 50
Maximum reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 ns
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
28 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP6 FEPF6 FEPB6 UNIT
Typical thermal resistance from junction to case per diode R
JC
3.6 5.1 3.6 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB FEP6DT-E3/45 1.81 45 50/tube Tube
ITO-220AB FEPF6DT-E3/45 1.97 45 50/tube Tube
TO-263AB FEPB6DT-E3/45 1.33 45 50/tube Tube
TO-263AB FEPB6DT-E3/81 1.33 81 800/reel Tape and reel
TO-220AB FEP6DTHE3/45
(1)
1.81 45 50/tube Tube
ITO-220AB FEPF6DTHE3/45
(1)
1.97 45 50/tube Tube
TO-263AB FEPB6DTHE3/45
(1)
1.33 45 50/tube Tube
TO-263AB FEPB6DTHE3/81
(1)
1.33 81 800/reel Tape and reel
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88598
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
0
6
8
10
7550250 100 125 150
4
2
Average Forward Rectied Current (A)
Case Temperature (°C)
Resistive or Inductive Load
0
50
1 10010
40
30
20
80
70
60
10
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.1
10
100
1
Instantaneous Forward Current (A)
1.8
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
6040200 10080
0.01
0.1
10
1
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
30
20
10
40
50
60
0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p

FEP6AT-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-MUR820-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union