DF3A5.6F
2014-03-01 1
TOSHIBA Diodes for Protecting against ESD
DF3A5.6F
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only and
is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Abusolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Power dissipation P 150 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA
5.3
5.6 6.0 V
Dynamic impedance Z
Z
I
Z
= 5 mA ― ― 40 Ω
Reverse current I
R
V
R
=2.5 V ― ― 1.0 μA
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0 V, f = 1 MHz ― 65 ― pF
Guaranteed Level of ESD Immunity
Test Condition ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
1. Cathode1
2. Cathode2
3.
node
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1E
Weight : 12 mg (typ.)
Unit: mm
Start of commercial production
2005-12
