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MMSZ5223ET1G

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 8
1 Publication Order Number:
MMSZ5221ET1/D
MMSZ52xxET1G Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Units
Peak Power Dissipation @ 20 ms (Note 1)
@ T
L
25C
P
pk
225 W
Total Power Dissipation on FR−5 Board,
(Note 3) @ T
L
= 75C
Derated above 75C
P
D
500
6.7
mW
mW/C
Thermal Resistance, (Note 2)
Junction−to−Ambient
R
q
JA
340
C/W
Thermal Resistance, (Note 2)
Junction−to−Lead
R
q
JL
150
C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ52xxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ52xxET3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
xxx = Device Code (Refer to page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
xxx M G
G
1
SZMMSZ52xxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Device*
Device
Marking
Zener Voltage (Notes 4 and 5) Zener Impedance (Note 6) Leakage Current
V
Z
(V) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA
V
MMSZ5221ET1G CA1 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMSZ5223ET1G CA3 2.57 2.7 2.84 20 30 1300 0.25 75 1
MMSZ5226ET1G CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1
MMSZ5228ET1G CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1
MMSZ5229ET1G CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1
MMSZ5231ET1G CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2
MMSZ5232ET1G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMSZ5234ET1G CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMSZ5235ET1G CB6 6.46 6.8 7.14 20 5 750 0.25 3 5
MMSZ5236ET1G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6
MMSZ5237ET1G CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMSZ5240ET1G CC2 9.50 10 10.50 20 17 600 0.25 3 8
MMSZ5242ET1G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1
MMSZ5243ET1G CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMSZ5244ET1G CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10
MMSZ5245ET1G CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMSZ5246ET1G CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMSZ5248ET1G CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14
MMSZ5250ET1G CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15
MMSZ5252ET1G CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30C 1C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Device*
Leakage CurrentZener Impedance (Note 6)Zener Voltage (Notes 4 and 5)
Device
Marking
Device*
I
R
@ V
R
Z
ZK
@ I
ZK
Z
ZT
@ I
ZT
@ I
ZT
V
Z
(V)
Device
Marking
Device*
V
mA
mA
WW
mAMaxNomMin
Device
Marking
MMSZ5253ET1G CD6 23.75 25 26.25 5.0 35 600 0.25 0.1 19
MMSZ5254ET1G CD7 25.65 27 28.35 4.6 41 600 0.25 0.1 21
MMSZ5255ET1G CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMSZ5256ET1G CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMSZ5257ET1G CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMSZ5258ET1G CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27
MMSZ5259ET1G CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30
MMSZ5262ET1G CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39
MMSZ5263ET1G CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30C 1C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
P1-P3P4-P6

MMSZ5223ET1G

Mfr. #:
Buy MMSZ5223ET1G
Manufacturer:
ON Semiconductor
Description:
Zener Diodes ZENER REGULATOR DIODE
Lifecycle:
New from this manufacturer.
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