IRF7413GTRPBF

P1-P3 P4-P6 P7-P9

IRF7413GPbF

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1

10

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

400

800

1200

1600

2000

2400

2800

3200

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 102030405060

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 9

I = 7.3A

V = 24V

V = 15V

D

DS

DS

1

10

100

0.4 1.2 2.0 2.8 3.6

T = 25°C

T = 150°C

J

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

IRF7413GPbF

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0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

V

DS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

Fig 9a. Basic Gate Charge Waveform

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Q

G

Q

GS

Q

GD

V

G

Charge

10V

Fig 9b. Gate Charge Test Circuit

IRF7413GPbF

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Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150

0

100

200

300

400

500

600

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

o

I

D

TOP

BOTTOM

3.3A

6.0A

7.3A

P1-P3 P4-P6 P7-P9

IRF7413GTRPBF

Mfr. #:

Buy IRF7413GTRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 30V 13A 11mOhm 44nC

Lifecycle:

New from this manufacturer.

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IRF7413GTRPBF