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BC847BW RFG

P1-P3P4-P6
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
- Low reverse current, high reliability
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: SOT-323 small outline plastic package
- Weight: 5 ± 0.5 mg
SYMBOL UNIT
P
D
mW
I
C
A
I
CM
A
T
J
, T
STG
°C
Document Number: DS_S1502002 Version: B15
Junction and Storage Temperature Range
Peak Collector Current
Collector Current
V
CBO
V
CEO
V
EBO
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
BC846AW/BW/CW
30
45
65
-55 to + 150
0.2
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
5
5
6
6
45
30
200
80
50
30
30
50
0.1
V
5
V
V
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE
NPN Transistor
FEATURES
SOT-323
MECHANICAL DATA
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
SYMBOL
MIN MAX
UNIT
80 -
50 -
30 -
30 -
50 -
65 -
45 -
30 -
30 -
45 -
6-
6-
5-
5-
5-
I
CBO
-15nA
I
EBO
- 100 nA
110 220 -
200 450 -
420 800 -
-0.25
-0.60
Transition Frequency
f
T
100 - MHz
0.58 0.70
-0.77
C
ob
-4.50pF
Document Number: DS_S1502002 Version: B15
V
CE
= 5 V , I
C
= 10 mA
I
C
= 10mA , I
B
= 0.5 mA
PARAMETER
BC849AW/BW/CW
V
CE(sat)
Emitter Cut-off Current at V
EB
= 5 V
h
FE
BC849AW/BW/CW
BC850AW/BW/CW
I
C
= 100mA , I
B
= 5 mA
V
EBO
V
at I
E
= 1 μA
BC847AW/BW/CW
BC848AW/BW/CW
V
CBO
BC847AW/BW/CW
BC848AW/BW/CW
at I
C
= 10 μA
BC846AW/BW/CW
V
(BR)CEO
at I
C
= 10 mA
BC847AW/BW/CW
DC Current Gain
at V
CE
= 5 V , I
C
= 2 mA
Collector-Emitter Saturation Voltage
BC846AW - BC850AW
BC846BW - BC850BW
Collector-Emitter Breakdown Voltage
BC850AW/BW/CW
VBC848AW/BW/CW
V
Collector Output Capacitance
V
BE
V
Collector Cut-off Current at V
CB
= 30 V
V
CB
= 10 V , I
E
= 0 , f = 1MHz
V
CE
= 5 V , I
C
= 10 mA , f = 100 MHz
Base Emitter Voltage
V
CE
= 5 V , I
C
= 2 mA
Collector-Base Breakdown Voltage
V
BC849AW/BW/CW
BC846AW/BW/CW
BC846CW - BC850CW
BC850AW/BW/CW
Emitter-Base Breakdown Voltage BC846AW/BW/CW
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1502002 Version: B15
RATINGS AND CHARACTERISTICS CURVES
10
100
1000
0.1 1 10 100
I
C
, Collector Current (mAdc)
Fig.6 Current-Gain-Bandwidth Product
f
T
, Current-Gain-Bandwidth Product (MHz)
V
CE
= 10 V
0.1
1
10
0.1 1 10 100 1000
I
C
, Collector Current (mAdc)
Fig.1 Normalized DC Current Gain
h
FE
, Normalized DC Current Gain
V
CE
= 10 V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1 10 100
I
C
, Collector Current (mAdc)
Fig.2 "Saturation" and "On" Voltages
V, Voltage (V)
V
BE(sat)
@ I
C
/ I
B
= 10
V
CE(sat)
@ I
C
/ I
B
= 10
V
BE(OFF)
@ V
CE
= 10 V
0.0
0.4
0.8
1.2
1.6
2.0
0.01 0.1 1 10 100
I
B
, Base Current (mA)
Fig.3 Collector Saturation Region
V
CE
, Collector-Emitter Voltage (V)
I
C
=100mA
I
C
=50mA
I
C
=20mA
I
C
=10mA
1
1.4
1.8
2.2
2.6
3
0.1 1 10 100
I
C
, Collector Current (mA)
Fig.4 Base-Emitter Current (mA)
Θ
VB
, Temperature Coefficient (mV/
o
C)
-55
o
C to +125
O
C
1
10
0.1 1 10 100
V
R
, Reverse Voltage (V)
Fig.5 Capacitances
C, Caoacitance (pF)
C
Ob
C
Ib
I
C
=200mA
P1-P3P4-P6

BC847BW RFG

Mfr. #:
Buy BC847BW RFG
Manufacturer:
Taiwan Semiconductor
Description:
Bipolar Transistors - BJT Transistor 200mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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