Data Sheet HMC8120
Rev. A | Page 5 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7
RFIN
GG1
/V
GG2
V
DD1
V
DD2
ENV
DET
V
CTL1
V
CTL2
V
GG3
V
DD3
V
GG4
V
DD4
V
GG5
V
GG6
V
DD5
V
DD6
V
REF
V
DET
123
4
5
6
RFOUT
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
HMC8120
TOP VIEW
(Not to Scale)
13150-002
Figure 2. Pad Configuration
Table 4. Pad Function Descriptions
Pad No. Mnemonic Description
1, 3, 4, 6, 10, 13, 16,
19, 24, 27
GND Ground Connection (See Figure 3).
2 RFIN RF Input. DC couple RFIN and match it to 50 Ω (see Figure 4).
5 RFOUT RF Output. DC couple RFOUT and match it to 50 Ω (see Figure 5).
7 V
DET
Detector Voltage for the Power Detector (See Figure 6). V
DET
is the dc voltage representing the RF
output power rectified by the diode, which is biased through an external resistor. Refer to the typical
application circuit for the required external components (see Figure 38).
8 V
REF
Reference Voltage for the Power Detector (See Figure 6). V
REF
is the dc bias of the diode biased through
an external resistor used for the temperature compensation of V
DET
. Refer to the typical application
circuit for the required external components (see Figure 38).
9, 12, 15, 18, 25, 26 V
DD6
to V
DD1
Drain Bias Voltage for the Variable Gain Amplifier (See Figure 7). For the required external
components, see Figure 38.
11, 14, 17, 20, 28
V
GG6
to V
GG3
,
V
GG1
/V
GG2
Gate Bias Voltage for the Variable Gain Amplifier (See Figure 8). For the required external components,
see Figure 38.
21, 22 V
CTL2
, V
CTL1
Gain Control Voltage for the Variable Gain Amplifier (See Figure 9). For the required external
components, see Figure 38.
23 ENV
DET
Envelope Detector (See Figure 10). For the required external components, see Figure 38.
Die Bottom GND Ground. Die bottom must be connected to the RF/dc ground (see Figure 3).
