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SFH 4780S

P1-P3P4-P6P7-P9P10-P12P13-P13
2015-11-30 1
2015-1 1-30
IR OSLUX (810nm) - 20°
Version 1.1
SFH 4780S
Ordering Information
Features:
• IR lightsource with high efficiency
• Double stack emitter
• Low thermal resistance (Max. 25 K/W)
• Centroid wavelength 810 nm
• Narrow half angle (+/- 10°)
Applications
• Infrared Illumination
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Type: Radiant Intensity Ordering Code
I
e
[mW/sr]
I
F
= 1 A, t
p
= 10 ms
SFH 4780S 2900 (≥ 2200) Q65111A6054
Note: measured at a solid angle of Ω = 0.001 sr
2015-11-30 2
Version 1.1 SFH 4780S
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operation and storage temperature range T
op
; T
stg
-40 ... 85 °C
Junction temperature T
j
145 °C
Reverse voltage V
R
1 V
Forward current I
F
500 mA
Surge current
(t
p
≤ 200 µs, D = 0)
I
FSM
2 A
Power consumption P
tot
1.8 W
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2 kV
Thermal resistance junction - solder point R
thJS
25 K / W
Note: For the forward current and power consumption please see "maximum permissible forward current"
diagram
Parameter Symbol Values Unit
Peak wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
peak
820 nm
Centroid wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
centroid
810 nm
Spectral bandwidth at 50% of I
max
(I
F
= 1 A, t
p
= 10 ms)
(typ) ∆λ 30 nm
Half angle (typ) ϕ ± 10 °
Dimensions of active chip area (typ) L x W 0.75 x 0.75 mm x
mm
Rise and fall times of I
e
( 10% and 90% of I
e max
)
(I
F
= 1 A, R
L
= 50 Ω)
(typ) t
r
/ t
f
8/ 14 ns
Forward voltage
(I
F
= 0.5 A, t
p
= 100 µs)
(typ (max)) V
F
3.3 (≤ 3.6) V
Forward voltage
(I
F
= 1 A, t
p
= 100 μs)
(typ (max)) V
F
3.6 V
Total radiant flux
(I
F
= 1 A, t
p
= 100 µs)
(typ) Φ
e
680 mW
Total radiant flux
(I
F
= 1 A, t
p
= 10 ms)
(typ) Φ
e
600 mW
Version 1.1 SFH 4780S
2015-11-30 3
Grouping (T
A
= 25 °C)
Temperature coefficient of I
e
or Φ
e
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
I
-0.3 % / K
Temperature coefficient of V
F
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
V
-2 mV / K
Temperature coefficient of wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
λ
0.3 nm / K
Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity
I
F
= 1 A, t
p
= 10 ms I
F
= 1 A, t
p
= 10 ms I
F
= 1 A, t
p
= 10 ms
I
e, min
[mW / sr] I
e, max
[mW / sr] I
e, typ
[mW / sr]
SFH 4780S 2200 4400 2900
Note: measured at a solid angle of Ω = 0.001 sr
Only one group in one packing unit (variation lower 2:1).
Relative Spectral Emission
1) page 12
I
rel
= f (λ), T
A
= 25 °C, I
F
=1A, Single pulse, t
p
= 10
ms
Radiant Intensity
1) page 12
I
e
/ I
e
(1 A) = f(I
F
), single pulse, t
p
= 100 µs,
T
A
= 25°C
Parameter Symbol Values Unit
700
0
nm
%
OHF05650
20
40
60
80
100
I
rel
λ
750 800 850 950
OHF05651
I
F
A10 5 10 5 10 10
1
e
(1 A)
I
e
I
-1 0
-2
10
5
10
-1
5
10
0
10
1
-2
P1-P3P4-P6P7-P9P10-P12P13-P13

SFH 4780S

Mfr. #:
Buy SFH 4780S
Manufacturer:
OSRAM Opto Semiconductors
Description:
Infrared Emitters - High Power IR 810nm IR OSLUX
Lifecycle:
New from this manufacturer.
Delivery:
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