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FFSP1065A

P1-P3P4-P5
FFSP1065A — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2017 Publication Order Number:
Sep, 2017, Rev.1.0 FFSP1065A/D
1
www.onsemi.com
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FFSP1065A Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 64 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 152
o
C 10
A
Continuous Rectified Forward Current @ T
C < 135 °C 15
I
F, Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25
o
C, 10 μs 760 A
T
C
= 150
o
C, 10 μs 740 A
I
F,SM
N o n - R e p e t i t i v e F o r w a r d S u r g e C u r r e n t H a l f - S i ne Pulse, t
p
= 8.3 ms 56 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 38 A
Ptot Power Dissipation
T
C
= 25
o
C 111 W
T
C
= 150
o
C 19 W
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
Symbol Parameter
Ratings
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 1.35
o
C/W
FFSP1065A
Silicon Carbide Schottky Diode
650 V, 10 A
Features
• Max Junction Temperature 175
o
C
• Avalanche Rated 64 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
TO-220-2L
1
1. Cathode 2. Anode
2
1. Cathode
2. Anode
FFSP1065A — Silicon Carbide Schottky Diode
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Typical Characteristics T
J
= 25 °C unless otherwise noted.
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating
Figure 4. Power Derating
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFSP1065A
FFSP1065A TO-220-2L Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
F
Forward Voltage
I
F
= 10 A, T
C
= 25
o
C - 1.50 1.75
VI
F
= 10 A, T
C
= 125
o
C-1.62.0
I
F
= 10 A, T
C
= 175
o
C - 1.72 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25
o
C - - 200
μAV
R
= 650 V, T
C
= 125
o
C - - 400
V
R
= 650 V, T
C
= 175
o
C - - 600
Q
C
Total Capacitive Charge V = 400 V - 34 - nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz - 575 -
pFV
R
= 200 V, f = 100 kHz - 62 -
V
R
= 400 V, f = 100 kHz - 47 -
0.0 0.5 1.0 1.5 2.0
0
2
4
6
8
10
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
200 300 400 500 600 650
10
-9
10
-8
10
-7
10
-6
10
-5
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
25 50 75 100 125 150 175
0
50
100
150
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175
0
40
80
120
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
Notes:
1: E
AS
of 64 mJ is based on starting T
J
= 25 °C, L = 0.5 mH, I
AS
= 16 A, V = 50 V.
FFSP1065A — Silicon Carbide Schottky Diode
www.onsemi.com
3
Typical Characteristics T
J
= 25 °C unless otherwise noted.
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6.
0 100 200 300 400 500 600650
0
10
20
30
40
50
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
0.1 1 10 100 650
10
100
1000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
Capacitance vs. Reverse Voltage
0 100 200 300 400 500 600650
0
2
4
6
8
10
12
E
C
, CAPACITIVE ENERGY (μJ)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
Figure 8.
Junction-to-Case Transient Thermal Response Curve
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.001
0.01
0.1
1
DUTY CIRCLE-DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
2
NORMALIZED THERMAL
IMPEDANCE, Z
θJC
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
Z
θJC
(t) = r(t) x R
θJC
R
θJC
= 1.35
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
θJC
(t) + T
C
P
DM
t
1
t
2
P1-P3P4-P5

FFSP1065A

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Buy FFSP1065A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SIC TO220 SBD 10A 650V
Lifecycle:
New from this manufacturer.
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