IXGH6N170 Datasheet IXGT6N170, IXGH6N170, IXGT6N170A | P1-P3

IXGT6N170

IXGH6N170

DS98989C(9/15)

High Voltage

IGBT

V

CES

= 1700V

I

C90

= 6A

V

CE(sat)



 4.0V

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 1700 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1M 1700 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 12 A

I

C90

T

C

= 90°C 6 A

I

CM

T

C

= 25°C, 1ms 24 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 33 I

CM

= 12 A

(RBSOA) Clamped Inductive Load @ 0.8 • V

CES

P

C

T

C

= 25°C 75 W

T

J

- 55 ... +150 C

T

JM

150 C

T

stg

- 55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1700 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 10 μA

T

J

= 125°C 100 μA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15V, Note 1 3.0 4.0 V

T

J

= 125°C 4.0

Features



International Standard Packages



High VoltagePackage

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Capacitor Discharge & Pulse Circuits



Uninterruptible Power Supplies (UPS)



Motor Drives



DC Servo & Robot Drives



DC Choppers



Switched-Mode & Resonant-Mode

Power Supplies

t

fi(typ)

= 290ns

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 (IXGH)

G

E

C (Tab)

C

TO-268 (IXGT)

E

G

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH6N170

IXGT6N170

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 6A, V

CE

= 10V, Note 1 3.0 4.5 S

I

C(ON)

V

GE

= 15V, V

CE

= 10V 28 A

C

ies

330 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 23 pF

C

res

6 pF

Q

g

20.0 nC

Q

ge

I

C

= 6A, V

GE

= 15V, V

CE

= 0.5 • V

CES

3.6 nC

Q

gc

8.0 nC

t

d(on)

40 ns

t

ri

36 ns

t

d(off)

250 500 ns

t

fi

290 500 ns

E

off

1.5 2.5 mJ

t

d(on)

45 ns

t

ri

40 ns

E

on

0.5 mJ

t

d(off)

300 ns

t

fi

300 ns

E

off

2.0 mJ

R

thJC

1.65 °C/W

R

thCK

TO-247 0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 6A, V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 33

Note 2

Inductive load, T

J

= 125°C

I

C

= 6A, V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 33

Note 2

TO-247 Outline

Terminals: 1 - Gate 2 - Collector

3 - Emitter

TO-268 Outline

Terminals: 1 - Gate 2,4 - Collector

3 - Emitter

e

P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

IXGH6N170

IXGT6N170

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

12

0123456

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

024681012141618

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

9V

11V

13V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

2

4

6

8

10

12

012345678

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 12A

I

C

= 6A

I

C

= 3A

Fig. 5. Input Admittance

0

1

2

3

4

5

6

7

8

9

10

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

Fig. 6. Transconductance

0

1

2

3

4

5

012345678910

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

125ºC

25ºC

IXGH6N170

IXGH6N170

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