NTMKE4892NT1G

NTMKE4892N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
302015100
0
1000
1500
2000
2500
3000
3500
4500
7060504020100
0
2
4
10
12
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
500
T
J
= 25°C
V
GS
= 0 V
C
oss
C
rss
30
8
6
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 19 A
QT
4000
5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
1000
0.80.70.5 0.9
0
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAINTOSOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE(°C)
100101
0.01
1
10
100
1000
75 1501251005025
0
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
V
DD
= 15 V
I
D
= 19 A
V
GS
= 4.5 V
t
f
t
r
t
d(off)
t
d(on)
10
12
20
V
GS
= 0 V
T
J
= 25°C
10 ms
100 ms
1 ms
10 ms
dc
0 V
GS
20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
20
40
I
D
= 44 A
0.1
0.4 0.6
Q
gd
Q
gs
0.1
60
80
100
120
25
5000
0.20.1 0.3
140
160
180
200
C
iss
4
14
6
16
8
18
220
240
260
280
300
NTMKE4892N
http://onsemi.com
5
PACKAGE DIMENSIONS
ICEPAK 6.3x4.9 E1 PAD
CASE 145AE01
ISSUE O
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.75
2.35
1.75
1.85
4X
1.45
2X
DIMENSIONS: MILLIMETERS
0.90
0.75
1.22
0.87
2X
4X
1.75
2.90
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE FLANGES
OF LEADFRAME ONLY.
SEATING
PLANE
D
E
A
A2
DIM
A
MIN MAX
MILLIMETERS
0.61 0.68
A1 0.02 0.08
F 0.98 BSC
A2 0.08 0.17
G 2.38 BSC
D 6.25 6.35
0.35 0.45
D2
GATE PAD
REFERENCE
0.08 C
0.08 C
NOTE 3
D3
D4
E2
2X
1.34 1.38
D3
TOP VIEW
SIDE VIEW
BOTTOM VIEW
F
0.64 0.68
D4
4.80 5.05
E
G
E3
3.85 3.95
E2
0.76 0.80
E3
0.64 0.68
E4
0.38 0.42
H
C
A1
2X
H
E4
D2
2X
0.12 C
A
A
0.12 C A
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NTMKE4892N/D
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NTMKE4892NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH ICEPAK 6.3X 4.9MM-E 25
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