This is information on a product in full production.
November 2012 Doc ID 7609 Rev 3 1/12
12
STS6NF20V
N-channel 20 V, 0.030 Ω typ., 6 A 2.7 V drive STripFET™ II
Power MOSFET in a SO-8 package
Datasheet — production data
Features
■ Ultra low threshold gate drive (2.5 V)
■ Standard outline for easy automated surface
mount assembly
Applications
■ Switching application
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1. Schematic diagram
Order code V
DSS
R
DS(on)
I
D
STS6NF20V 20 V
< 0.040 Ω (@4.5 V)
6 A
< 0.045 Ω (@2.7 V)
Table 1. Device summary
Order code Marking Package Packaging
STS6NF20V S6NF20V SO-8 Tape and reel
www.st.com
