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MJD361T4-A

P1-P3P4-P6P7-P7
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
August 2009 Doc ID 16126 Rev 1 1/7
7
MJD360T4-A
MJD361T4-A
Low voltage complementary power transistors
Features
■ Those devices are qualified for automotive
application
■ Low collector emitter saturation voltage
■ Surface-mounting TO-252 power package in
tape and reel
Applications
■ General purpose switching and amplifier
transistor
Description
The devices are manufactured in planar
technology with “base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
DPAK
TO-252
1
3
TAB
Table 1. Device summary
Order code Marking Polarity Package Packaging
MJD360T4-A MJD360 NPN
DPAK Tape and reel
MJD361T4-A MJD361 PNP
www.st.com
Electrical ratings MJD360T4-A, MJD361T4-A
2/7 Doc ID 16126 Rev 1
1 Electrical ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 60 V
V
CEO
Collector-emitter voltage (I
B
= 0) 60 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 3 A
I
CM
Collector peak current 5 A
I
B
Base current 1 A
P
TOT
Total dissipation at T
c
= 25 °C 15 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max. 8.3 °C/W
MJD360T4-A, MJD361T4-A Electrical characteristics
Doc ID 16126 Rev 1 3/7
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Note: For PNP types voltage and current values are negative.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CE
= 60 V
20 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 4 V
100 µA
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 10 mA 60 V
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 1 mA 60 V
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
C
= 100 µA 5 V
V
CE(sat)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
saturation voltage
I
C
= 200 mA I
B
= 10 mA
I
C
= 1 A I
B
= 50 mA
I
C
= 3 A I
B
= 150 mA
0.1
0.3
0.9
V
V
V
h
FE
(1)
DC current gain
I
C
= 200 mA V
CE
= 1 V
I
C
= 1 A _ V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
90
60
30
130
100
60
P1-P3P4-P6P7-P7

MJD361T4-A

Mfr. #:
Buy MJD361T4-A
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT LV Complimentary 60V Power Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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