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SBC847CWT3G
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BC846, BC847, BC848
www
.onsemi.com
4
BC846A, BC847A, BC848A
Figure 6. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 7. Base−Emitter T
emperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOL
T
AGE (V)
VB
, TEMPERA
TURE COEFFICIENT (mV/
C)
°
θ
0.2
1.0
10
100
-55
°
C to +125
°
C
T
A
= 25
°
C
I
C
= 50 mA
I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0
Figure 8. Capacitances
V
R
, REVERSE VOL
T
AGE (VOL
TS)
10
Figure 9. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4
0.6
1.0
10
20
1.0
2.0
6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7
1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
V
CE
= 10 V
T
A
= 25
°
C
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8
4.0
8.0
T
A
= 25
°
C
C
ob
C
ib
BC846, BC847, BC848
www
.onsemi.com
5
BC846B
Figure 10. DC Current Gain vs. Collector
Current
Figure 1
1. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
0.1
0.01
0.001
0
100
200
300
400
600
0.1
0.01
0.001
0.0001
0
0.15
0.30
Figure 12. Collector Emitter Saturation V
oltage
vs. Collector Current
Figure 13. Base Emitter Saturation V
oltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
0.1
0.01
0.001
0.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.1
0.01
0.001
0.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SA
TURA
TION VOL
T
AGE (V)
V
BE(sat)
, BASE−EMITTER
SA
TURA
TION VOL
T
AGE (V)
V
BE(on)
, BASE−EMITTER VOL
T
AGE (V)
1
V
CE
= 1 V
150
°
C
−55
°
C
25
°
C
I
C
/I
B
= 20
150
°
C
−55
°
C
25
°
C
0.4
0.9
I
C
/I
B
= 20
150
°
C
−55
°
C
25
°
C
0.4
0.7
1.1
V
CE
= 5 V
150
°
C
−55
°
C
25
°
C
500
0.25
0.20
0.05
0.10
Figure 14. Base Emitter V
oltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.1
0.01
0.001
0
100
200
300
400
600
h
FE
, DC CURRENT GAIN
1
V
CE
= 5 V
150
°
C
−55
°
C
25
°
C
500
BC846, BC847, BC848
www
.onsemi.com
6
BC846B
Figure 15. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 16. Base−Emitter T
emperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
VB
, TEMPERA
TURE COEFFICIENT (mV/
C)
°
θ
0.2
2.0
10
200
1.0
T
A
= 25
°
C
200 mA
50 mA
I
C
=
10 mA
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5
5.0
20
50
100
-55
°
C to 125
°
C
q
VB
for V
BE
Figure 17. Capacitance
V
R
, REVERSE VOL
T
AGE (VOL
TS)
40
Figure 18. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
50
100
5.0
V
CE
= 5 V
T
A
= 25
°
C
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5
5.0
20
T
A
= 25
°
C
C
ob
C
ib
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
SBC847CWT3G
Mfr. #:
Buy SBC847CWT3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC70 GP XSTR NPN 45V
Lifecycle:
New from this manufacturer.
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