ACTP250J1BJ AC Transient Protector
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage V
DRM
±190 V
Non-repetitive peak on-state pulse current (see Notes 1,2 and 3)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage waveshape)
I
PPSM
1000 A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value <50 A di
T
/dt 800 A/μs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES:
1. Initially, the device must be in thermal equilibrium with T
J
= 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial
conditions.
3. When used as intended; see Application section on page 5.
Parameter Test Conditions Min. Typ. Max. Unit
Repetitive peak off-state
current
V
D
= ±V
DRM
T
A
= 25 °C
T
A
= 85 °C
± 5
±10
μA
AC breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300 ohms ±250 V
Ramp breakover voltage
dv/dt ≤ ±1000 V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
±263 V
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300 ohms ±600 mA
Holding current I
T
= ±5 A, di/dt = ±30 mA/ms ±20 mA
Off-state current V
D
= ±50 V T
A
= 85 °C ±10 μA
Off-state capacitance f = 1 MHz, V
d
= 1 Vrms, V
D
= 0 105 125 pF
I
DRM
V
(BO)
V
(BO)
I
(BO)
I
H
I
D
C
off
Thermal Characteristics
Parameter Test Conditions Min. Typ. Max. Unit
Junction to free air thermal resistance
EIA/JESD51-2 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 4)
90 °C/W
R
θJA
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.