STP80NE03L-06
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET
■
TYPICAL R
DS(on)
= 0.005
Ω
■
EXCEPTIONAL dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
LOW GATE CHARGE 100
o
C
■
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size
" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
DC-DC & DC-AC CONVERTERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
®
INTERNAL SCHEMATIC DIAGRAM
February 2000
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 30 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)30V
V
GS
Gate-source Voltage ± 22 V
I
D
Drain Current (continuous) at T
c
= 25
o
C80A
I
D
Drain Current (continuous) at T
c
= 100
o
C60A
I
DM
(•) Drain Current (pulsed) 320 A
P
tot
Total Dissipation at T
c
= 25
o
C150W
Derating Factor 1 W/
o
C
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(
•
) Pulse width limited by safe operating area (
1
) I
SD
≤
80 A, di/dt
≤
300 A/
µ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STP80NE03L-06 30 V < 0.006 Ω 80 A
1/8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
