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SPB80N06S2-09

P1-P3P4-P6P7-P8
2003-05-09
Page 1
SPP80N06S2-09
SPB80N06S2-09
OptiMOS
Power-Transistor
Product Summary
V
DS
55 V
R
DS(on)
9.1 mΩ
I
D
80 A
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO263 -3-2 P- TO220 -3-1
Marking
2N0609
2N0609
Type Package Ordering Code
SPP80N06S2-09 P- TO220 -3-1 Q67060-S6025
SPB80N06S2-09 P- TO263 -3-2 Q67060-S6027
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
1)
T
C
=25°C
I
D
80
70
A
Pulsed drain current
T
C
=25°C
I
D puls
320
Avalanche energy, single pulse
I
D
=80 A , V
DD
=25V, R
GS
=25Ω
E
AS
370 mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
19
Reverse diode dv/dt
I
S
=80A, V
DS
=44V, di/dt=200A/µs, T
jmax
=175°C
dv/dt 6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
190 W
Operating and storage temperature T
j
, T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1 55/175/56
2003-05-09
Page 2
SPP80N06S2-09
SPB80N06S2-09
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
R
thJC
- 0.52 0.8 K/W
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
55 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
= 125 µA
V
GS(th)
2.1 3 4
Zero gate voltage drain current
V
DS
=55V, V
GS
=0V, T
j
=25°C
V
DS
=55V, V
GS
=0V, T
j
=125°C
I
DSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
- 1 100 nA
Drain-source on-state resistance
V
GS
=10V, I
D
=50A
R
DS(on)
- 7.6 9.1
mΩ
1
Current limited by bondwire ; with an R
thJC
= 0.8K/W the chip is able to carry I
D
= 99A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-05-09
Page 3
SPP80N06S2-09
SPB80N06S2-09
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=70A
34 68 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 2360 3140 pF
Output capacitance C
oss
- 610 810
Reverse transfer capacitance C
rss
- 150 230
Turn-on delay time t
d(on)
V
DD
=30V, V
GS
=10V,
I
D
=80A,
R
G
=4.7Ω
- 14 21 ns
Rise time t
r
- 29 44
Turn-off delay time t
d(off)
- 39 58
Fall time t
f
- 28 42
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=44V, I
D
=80A - 12 16 nC
Gate to drain charge Q
gd
- 24 37
Gate charge total Q
g
V
DD
=44V, I
D
=80A,
V
GS
=0 to 10V
- 60 80
Gate plateau voltage V
(plateau)
V
DD
=44V, I
D
=80A - 5.8 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 80 A
Inv. diode direct current, pulsed
I
SM
- - 320
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=80A - 0.9 1.3 V
Reverse recovery time t
rr
V
R
=30V, I
F
=l
S
,
di
F
/dt=100A/µs
- 50 63 ns
Reverse recovery charge Q
rr
- 76 95 nC
P1-P3P4-P6P7-P8

SPB80N06S2-09

Mfr. #:
Buy SPB80N06S2-09
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 80A D2PAK
Lifecycle:
New from this manufacturer.
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