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X00602MN5BA4

P1-P3P4-P6P7-P9
April 2008 Rev 5 1/9
9
X006
0.8 A sensitive gate SCRs
Features
■ I
T(RMS)
= 0.8 A
■ V
DRM
/V
RRM
= 600 V
■ I
GT
= 200 µA
Description
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such
as ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, etc.
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
A
K
G
TO-92
(X00602A)
SOT-223
(X00602N)
A
A
K
G
A
K
G
www.st.com
Characteristics X006
2/9
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180 °Conduction angle)
TO-92 T
l
= 85 °C
0.8 A
SOT-223 T
tab
= 100 °C
IT
(AV)
Average on-state current (180 °Conduction angle)
TO-92 T
l
= 85 °C
0.5 A
SOT-223 T
tab
= 100 °C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
10
A
t
p
= 10 ms 9
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25 °C 0.4 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 2. Electrical characteristics
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 140 Ω
MIN. 15
µA
MAX. 200
V
GT
MAX. 0.8 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ , R
GK
= 1 kΩ T
j
= 125 °C MIN. 0.2 V
V
RG
I
RG
= 10 µA MIN. 5 V
I
H
I
T
= 50 mA, R
GK
= 1 kΩ MAX. 5 mA
I
L
I
G
= 1 mA, R
GK
= 1 kΩ MAX. 6 mA
dV/dt V
D
= 67% V
DRM,
R
GK
= 1 kΩ T
j
= 125 °C MIN. 25 V/µs
V
TM
I
TM
= 1 A, tp = 380 µs T
j
= 25 °C MAX. 1.35 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
d
Dynamic resistance T
j
= 125 °C MAX. 245 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM ,
R
GK
= 1 kΩ
T
j
= 25 °C MAX. 1
µA
T
j
= 125 °C MAX. 100
X006 Characteristics
3/9
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient (DC)
TO-92 150
°C/W
S = 5 cm
2
SOT-223 60
R
th(j-l)
Junction to lead (DC) TO-92 70
R
th(j-t)
Junction to tab (DC) SOT-223 30
Figure 1. Maximum average power
dissipation versus average on-state
current
Figure 2. Average and DC on-state current
versus case temperature (TO-92)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6
P(W)
I (A)
T(AV)
α = 180°
360°
α
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
l
α
= 180°
D.C.
TO-92
Figure 3. Average and D.C. on-state current
versus ambient temperature (epoxy
printed circuit board FR4, copper
thickness = 35 µm, S
CU
= 0.5 cm
2
)
(TO-92)
Figure 4. Average and DC on-state current
versus case temperature (SOT-223)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
amb
α
= 180°
D.C.
TO-92
S = 0.5 cm
CU
2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
tab
α
= 180°
D.C.
SOT-223
P1-P3P4-P6P7-P9

X00602MN5BA4

Mfr. #:
Buy X00602MN5BA4
Manufacturer:
STMicroelectronics
Description:
SCRs SENSITIVE GATE SCR
Lifecycle:
New from this manufacturer.
Delivery:
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