Characteristics X006
4/9
Figure 5. Average and DC on-state current
versus ambient temperature (epoxy
PCB FR4, copper
thickness = 35 µm, S
CU
= 5 cm
2
)
(SOT-223)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration (PCB FR4,
copper thickness = 35 µm, S
CU
= 0.5
cm
2
) (TO-92)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
amb
α
= 180°
D.C.
SOT-223
S = 0.5 cm
CU
2
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
t (s)
p
TO-92
S = 0.5 cm
CU
2
Figure 7. Relative variation of thermal
impedance junction to ambient
versus pulse duration (PCB FR4,
copper thickness = 35 µm, S
CU
= 0.5
cm
2
) (SOT-223)
Figure 8. Thermal resistance junction to
ambient versus copper surface
under tab (PCB FR4, copper
thickness = 35 µm) (SOT-223)
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
t (s)
p
SOT-223
S = 0.5 cm
CU
2
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(cm²)
R (°C/W)
th(j-a)
Figure 9. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 10. Relative variation of holding
current versus gate-cathode
resistance (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
R(k)
GK
Ω
I [R ] / I [ =1k ]
HGK H
ΩR
GK
