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BD743A-S

P1-P3P4-P4
BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD744 Series
90 W at 25°C Case Temperature
15 A Continuous Collector Current
20 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= 20 V.
TINUEULAVLOBMYSGNITAR
Collector-base voltage (I
E
= 0)
BD743
BD743A
BD743B
BD743C
V
CBO
50
70
90
110
V
Collector-emitter voltage (I
B
= 0)
BD743
BD743A
BD743B
BD743C
V
CEO
45
60
80
100
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
15 A
I)1 etoN ees( tnerruc rotcelloc kaeP
CM
20 A
Continuous base current I
B
5 A
Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac
tot
90 W
P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC
tot
2 W
IL½)4 etoN ees( ygrene daol evitcudni depmalcnU
C
2
90 mJ
Operating free air temperature r Tegna
A
-65 to +150 °C
Tegnar erutarepmet noitcnuj gnitarepO
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL
L
250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA I
B
= 0 (see Note 5)
BD743
BD743A
BD743B
BD743C
45
60
80
100
V
I
CBO
Collector cut-off
current
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
=110 V
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
=110 V
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
0.1
0.1
0.1
0.1
5
5
5
5
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
=0
I
B
=0
BD743/743A
BD743B/743C
0.1
0.1
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V I
C
=0 0.5 mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1A
I
C
= 5A
I
C
=15A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.5 A
I
B
= 5 A
I
C
= 5A
I
C
= 15 A
(see Notes 5 and 6)
1
3
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
V
CE
= 4 V
I
C
= 5 A
I
C
=15 A
(see Notes 5 and 6)
1
3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V I
C
= 1A f = 1 kHz 25
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V I
C
= 1A f = 1 MHz 5
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.4 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
d
Delay time
I
C
= 5 A
V
BE(off)
= -4.2 V
I
B(on)
= 0.5 A
R
L
= 6 Ω
I
B(off)
= -0.5 A
t
p
= 20 µs, dc ≤ 2%
20 ns
t
r
Rise time 350 ns
t
s
Storage time 500 ns
t
f
Fall time 400 ns
OBSOLETE
BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1 1·0 10 100
h
FE
- DC Current Gain
10
100
TCS637AA
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1 1·0 10 100
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10
TCS637AB
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
t
p
= 300µs, duty cycle < 2%
I
C
I
B
= 10
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1 1·0 10 100
V
BE
- Base-Emitter Voltage - V
0·1
1·0
10
TCS637AC
V
CE
= 4 V
t
p
= 300µs, duty cycle < 2%
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
OBSOLETE
P1-P3P4-P4

BD743A-S

Mfr. #:
Buy BD743A-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 60V 15A NPN
Lifecycle:
New from this manufacturer.
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