Reverse Voltage: 20 to 40 V
Forward Current: 1.0 A
RoHS Device
Dimensions in inches and (millimeter)
DO-41
Features
-Epitaxial construction.
-Low forward voltage drop.
-Metal-Semiconductor junction with guard ring.
-High current capability.
-For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
Mechanical data
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode
-Mounting position: Any
-Weight: 0.012 once, 0.34 grams
1N5817-G Thru. 1N5819-G
Page 1
QW-BG016
Schottky Barrier Rectifiers
REV:A
Comchip Technology CO., LTD.
0.205(5.20)
1.000(25.40) Min.
0.034(0.90)
0.028(0.70)
0.107(2.70)
0.080(2.00)
DIA.
DIA.
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@TA=75°C
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum forward voltage at 3.0A DC
@TJ=100°C
Operating temperature range
Storage temperature range
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
1N5817-G
20
14
VRRM
VRMS
VDC
I(AV)
IFSM
VF
CJ
RθJA
TJ
TSTG
1.0
25
1.0
110
80
-55 to +150
-55 to +150
V
V
V
A
A
V
pF
°C
°C
mA
°C/W
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
1N5818-G
30
21
Maximum forward voltage at 1.0A DC
VF
20
30
40
1N5819-G
40
28
V
0.450 0.550 0.600
0.9000.8750.750
-Case: JEDEC DO-41 molded plastic
1.000(25.40) Min.
0.165(4.20)
Maximum DC reverse current
at rated DC blocking voltage
@TJ=25°C
IR
10
Company reserves the right to improve product design , functions and reliability without notice.
Maximum Ratings and Electrical Characteristics
