MC74VHCT259A
http://onsemi.com
4
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.5 to +7.0 V
V
IN
Digital Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage Output in 3−State
High or Low State
−0.5 to +7.0
−0.5 to V
CC
+0.5
V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current $20 mA
I
OUT
DC Output Current, per Pin $25 mA
I
CC
DC Supply Current, V
CC
and GND Pins $75 mA
P
D
Power Dissipation in Still Air SOIC Package
TSSOP
200
180
mW
T
STG
Storage Temperature Range −65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) $300 mA
q
JA
Thermal Resistance, Junction−to−Ambient SOIC Package
TSSOP
143
164
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 4.5 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage Output in 3−State
High or Low State
0
0
5.5
V
CC
V
T
A
Operating Temperature Range, all Package Types −55 125 °C
t
r
, t
f
Input Rise or Fall Time V
CC
= 5.0 V + 0.5 V 0 20 ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
Junction
Temperature °C Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 5. Failure Rate vs. Time Junction Temperature