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NTZD5110NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 6
1 Publication Order Number:
NTZD5110N/D
NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N−Channel
with ESD Protection, SOT−563
Features
• Low R
DS(on)
Improving System Efficiency
• Low Threshold Voltage
• ESD Protected Gate
• Small Footprint 1.6 x 1.6 mm
• These are Pb−Free Devices
Applications
• Load/Power Switches
• Driver Circuits: Relays, Lamps, Displays, Memories, etc.
• Battery Management/Battery Operated Systems
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
294
mA
T
A
= 85°C 212
Power Dissipation
(Note 1)
Steady State
P
D
250 mW
Continuous Drain
Current (Note 1)
tv5 s
T
A
= 25°C I
D
310
mA
T
A
= 85°C
225
Power Dissipation
(Note 1)
t v 5 s
P
D
280 mW
Pulsed Drain Current
t
p
= 10 ms
I
DM
590 mA
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
350 mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Gate−Source ESD Rating (HBM, Method 3015) ESD 1800 V
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
500
°C/W
Junction−to−Ambient – t v 5 s (Note 1) 447
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
SOT−563
CASE 463A
MARKING
DIAGRAM
http://onsemi.com
V
(BR)DSS
R
DS(on)
MAX I
D
Max
60
1.6 W @ 10 V
2.5 W @ 4.5 V
310 mA
1
6
S7 = Specific Device Code
M = Date Code
S7MG
G
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3D
2
PINOUT: SOT−563
D1
S1
G1
D2
S2
G2
N−Channel
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
NTZD5110N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted.)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 − − V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−
− 71 − mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C − − 1.0 mA
T
J
= 125°C − − 500
V
GS
= 0 V
V
DS
= 50 V
T
J
= 25°C − − 100
nA
T
J
= 85°C − − 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V − − "10
mA
V
DS
= 0 V, V
GS
= "10 V − − 450 nA
V
DS
= 0 V, V
GS
= "5.0 V − − 150 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 − 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
− − 4.0 − mV/°C
Drain−to−Source On Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 500 mA − 1.19 1.6 W
V
GS
= 4.5 V, I
D
= 200 mA − 1.33 2.5
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 200 mA − 80 − S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 20 V
− 24.5 −
pF
Output Capacitance C
OSS
− 4.2 −
Reverse Transfer Capacitance C
RSS
− 2.2 −
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V;
I
D
= 200 mA
− 0.7 −
nC
Threshold Gate Charge Q
G(TH)
− 0.1 −
Gate−to−Source Charge Q
GS
− 0.3 −
Gate−to−Drain Charge Q
GD
− 0.1 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 30 V,
I
D
= 200 mA, R
G
= 10 W
− 12 −
ns
Rise Time t
r
− 7.3 −
Turn−Off Delay Time t
d(OFF)
− 63.7 −
Fall Time t
f
− 30.6 −
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C − 0.8 1.2
V
T
J
= 85°C − 0.7 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
NTZD5110N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
1251007550250−25−50
0.6
1.0
1.4
1.8
2.2
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
V
GS
= 10 V
7.0 V
8.0 V
9.0 V
4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 10 V
I
D
= 500 mA
I
D
= 200 mA
150
I
D
= 0.2 A
V
GS
= 4.5 V
V
GS
= 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
P1-P3P4-P5

NTZD5110NT1G

Mfr. #:
Buy NTZD5110NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 60V 0.294A SOT563
Lifecycle:
New from this manufacturer.
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