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Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
Vishay Siliconix
SUD19N20-90
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767
.
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature ( )°C
V
GS
= 10 V
I
D
= 5 A
R
DS(on)
- On-Resistance
(Normalized)
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
- S o urce Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
T
C
- Case Temperature (°C)
- Drain Current (A)
I
D
0
5
10
15
20
25
0 25 50 75 100 125 150 175
Safe Operating Area
10
0.1
00 0 1 0 1 1 1 . 0
Limited by R
DS(on)
*
1
100
T
C
= 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
100 µs
10 µs
100
1 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-
4
10
-
3
10
-
2
1010
-
1
1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
