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ESH1B-M3/61T

P1-P3P4-P5
ESH1B, ESH1C, ESH1D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters in
high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 150 V, 200 V
t
rr
25 ns
V
F
at I
F
0.90 V
T
J
max. 175 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1B ESH1C ESH1D UNIT
Device marking code EHB EHC EHD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum RMS voltage V
RMS
70 105 140 V
Maximum DC blocking voltage V
DC
100 150 200 V
Maximum average forward rectified current at T
L
= 150 °C I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC
®
method)
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ESH1B, ESH1C, ESH1D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB with 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage
I
F
= 0.7 A V
F
(1)
0.87
V
I
F
= 1 A V
F
0.90
Maximum DC reverse current at rated DC
blocking voltage
T
A
= 25 °C
I
R
1.0
µA
T
A
= 125 °C 25
Maximum reverse current V
R
= 20 V, T
J
= 150 °C I
R
50 µA
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A t
rr
25 ns
Typical reverse recovery time
I
F
= 0.6 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
25
ns
T
J
= 100 °C 35
Typical stored charge
I
F
= 0.6 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
10
nC
T
J
= 100 °C 15
Typical junction capacitance 4.0 V, 1 MHz C
J
25 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1B ESH1C ESH1D UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W
R
JL
(1)
30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ESH1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ESH1DHE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
ESH1DHE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
ESH1B, ESH1C, ESH1D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Reverse Leakage Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.2
95 105 115 125 135 145 155 165
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
175
T
L
Measured
at the Cathode Band Terminal
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
1
10
100
10
40
20
50
30
0
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
100
10
0.1
0.01
0.001
1
20 40 60 80 100
Instantaneous Reverse Leakage
Current (µA)
T
J
= 175 °C
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
100
1.2 1.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
1
0.1 101 100
1
10
100
0.01
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

ESH1B-M3/61T

Mfr. #:
Buy ESH1B-M3/61T
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1A,100V,25NS,UF RECT,SMD
Lifecycle:
New from this manufacturer.
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