NLAS3158MNR2G

© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 2
1 Publication Order Number:
NLAS3158/D
NLAS3158
Low Voltage Dual SPDT
Analog Switch Dual 2:1
Multiplexer
The NLAS3158 is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. It achieves very low
propagation delay and RDS
ON
resistances while maintaining CMOS
low power dissipation. Analog and digital voltages that may vary
across the full power−supply range (from V
CC
to GND). This device
is a drop in replacement for the PI5A3158.
The select pin has overvoltage protection that allows voltages
above V
CC,
up to 7.0 V to be present on the pin without damage or
disruption of operation of the part, regardless of the
operating voltage.
Features
High Speed: t
PD
= 1.0 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25°C
Standard CMOS Logic Levels
High Bandwidth, Improved Linearity
Low RDS
ON
: 8 W Max at 3 V
Break Before Make Circuitry, Prevents Inadvertent Shorts
This is a Pb−Free Device
Typical Applications
Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV
May be used for Clock Switching, Data MUX’ing, etc.
Can Switch Balanced Signal Pairs, e.g. LVDS u 200 Mb/s
Important Information
Latchup Performance Exceeds 300 mA
Pin for Pin Drop in for PI5A3158
WDFN Package, 3x1 mm
ESD Performance: Human Body Model; u 2000 V;
Machine Model; u 200 V
Extended Automotive Temperature Range −55°C to +125°C
(See Appendix A)
WDFN12
MN SUFFIX
CASE 485AG
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MARKING DIAGRAM
AS = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
L
H
FUNCTION TABLE
Select Input Function
B0 Connected to A
B1 Connected to A
1
12
1
ASMG
G
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
ORDERING INFORMATION
Figure 1. Pinout (Top View)
S
1
A
0
GND
A
1
0
B
0
1
2
3
12
10
V
CC
11
4
5
6
9
7
8
1
B
0
GND
1
B
1
V
CC
S
0
0
B
1
NLAS3158
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage V
CC
−0.5 to +7.0 V
DC Switch Input Voltage (Note 1) V
IS
−0.5 to V
CC
+ 0.5 V
DC Input Voltage (Note 1) V
IN
−0.5 to + 7.0 V
DC Input Diode Current @ V
IN
t 0 V I
IK
−50 mA
DC Output Current I
OUT
128 mA
DC V
CC
or Ground Current I
CC
/I
GND
+100 mA
Storage Temperature Range T
stg
−65 to +150 °C
Junction Temperature Under Bias T
J
150 °C
Junction Lead Temperature (Soldering, 10 Seconds) T
L
260 °C
Power Dissipation @ +85°C P
D
180 mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed.
RECOMMENDED OPERATING CONDITIONS (Note 2)
Characteristic Symbol Min Max Unit
Supply Voltage Operating V
CC
1.65 5.5 V
Select Input Voltage V
IN
0 V
CC
V
Switch Input Voltage V
IS
0 V
CC
V
Output Voltage V
OUT
0 V
CC
V
Operating Temperature T
A
−55 +125 °C
Input Rise and Fall Time
Control Input V
CC
= 2.3 V−3.6 V
Control Input V
CC
= 4.5 V−5.5 V
t
r
, t
f
0
0
10
5.0
ns/V
Thermal Resistance q
JA
350 °C/W
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the
Recommended Operating Ranges limits may affect device reliability.
2. Select input must be held HIGH or LOW, it must not float.
NLAS3158
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3
DC ELECTRICAL CHARACTERISTICS (T
A
= −40°C to +85°C)
Symbo
l
Parameter Test Conditions
V
CC
(V)
T
A
= +255C T
A
= −405C to +855C
Uni
t
Min Typ Max Min Max
V
IH
HIGH Level
Input Voltage
1.65−1.95
2.3−5.5
0.75 V
CC
0.7 V
CC
V
V
IL
LOW Level
Input Voltage
1.65−1.95
2.3−5.5
0.25 V
CC
0.3 V
CC
V
I
IN
Input Leakage Current 0 v V
IN
v 5.5 V 0−5.5 "0.0
5
"0.1 "1 mA
I
OFF
OFF State Leakage
Current
0 v A, B v V
CC
1.65−5.5 "0.0
5
"0.1 "1 mA
R
ON
Switch On Resistance
(Note 3)
V
IN
= 0 V, I
O
= 30 mA
V
IN
= 2.4 V, I
O
= −30 mA
V
IN
= 4.5 V, I
O
= −30 mA
4.5 3.0
5.0
7.0
6.0
8.0
13
6.0
8.0
13
W
V
IN
= 0 V, I
O
= 24 mA
V
IN
= 3 V, I
O
= −24 mA
3.0 4.0
10
8.0
19
8.0
19
W
V
IN
= 0 V, I
O
= 8 mA
V
IN
= 2.3 V, I
O
= −8 mA
2.3 5.0
13
9.0
24
9.0
24
W
V
IN
= 0 V, I
O
= 4 mA
V
IN
= 1.65 V, I
O
= −4 mA
1.65 6.5
17
12
39
12
39
W
I
CC
Quiescent Supply
Current
All Channels ON or
OFF
V
IN
= V
CC
or GND
I
OUT
= 0
5.5 1.0 10 mA
Analog Signal Range V
CC
0 V
CC
0 V
CC
V
R
RANGE
On Resistance
Over Signal Range
(Note 3) (Note 7)
I
A
= −30 mA, 0 v V
Bn
v V
CC
I
A
= −24 mA, 0 v V
Bn
v V
CC
I
A
= −8 mA, 0 v V
Bn
v V
CC
I
A
= −4 mA, 0 v V
Bn
v V
CC
4.5
3.0
2.3
1.65
25
50
100
300
W
DR
ON
On Resistance Match
Between Channels
(Note 3) (Note 4)
(Note 5)
I
A
= −30 mA, V
Bn
= 3.15
I
A
= −24 mA, V
Bn
= 2.1
I
A
= −8 mA, V
Bn
= 1.6
I
A
= −4 mA, V
Bn
= 1.15
4.5
3.0
2.3
1.65
0.15
0.2
0.5
0.5
W
R
flat
On Resistance
Flatness (Note 3)
(Note 4) (Note 6)
I
A
= −30 mA, 0 v V
Bn
v V
CC
I
A
= −24 mA, 0 v V
Bn
v V
CC
I
A
= −8 mA, 0 v V
Bn
v V
CC
I
A
= −4 mA, 0 v V
Bn
v V
CC
5.0
3.3
2.5
1.8
5.0
10
24
110
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5. DR
ON
= R
ON
max − R
ON
min measured at identical V
CC
, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.

NLAS3158MNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs Dual SPDT ANLG Sw. -55 to 125deg C
Lifecycle:
New from this manufacturer.
Delivery:
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