IPB80N06S4L05ATMA2

P1-P3 P4-P6 P7-P9

IPB80N06S4L-05

IPI80N06S4L-05, IPP80N06S4L-05

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

80 A

T

C

=100°C, V

GS

=10V

2)

78

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

320

Avalanche energy, single pulse

2)

E

AS

I

D

=40A

152 mJ

Avalanche current, single pulse

I

AS

-

80 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25°C

107 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - 55/175/56

Value

V

DS

60 V

R

DS(on),max

(SMD version) 4.8

mΩ

I

D

80 A

Product Summary

Type Package Marking

IPB80N06S4L-05 PG-TO263-3-2 4N06L05

IPI80N06S4L-05 PG-TO262-3-1 4N06L05

IPP80N06S4L-05 PG-TO220-3-1 4N06L05

PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2

Rev. 1.0 page 1 2009-03-24

IPB80N06S4L-05

IPI80N06S4L-05, IPP80N06S4L-05

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 1.4 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

---62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

60 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=60µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=60V, V

GS

=0V

- 0.01 1 µA

V

DS

=60V, V

GS

=0V,

T

j

=125°C

2)

- 5 100

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=40A

- 5.7 8.5

mΩ

V

GS

=4.5V, I

D

=40A,

SMD version

- 5.4 8.2

V

GS

=10 V, I

D

=80 A

- 4.2 5.1

V

GS

=10 V, I

D

=80 A,

SMD version

- 3.9 4.8

Values

Rev. 1.0 page 2 2009-03-24

IPB80N06S4L-05

IPI80N06S4L-05, IPP80N06S4L-05

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 6290 8180 pF

Output capacitance

C

oss

- 1350 1755

Reverse transfer capacitance

C

rss

- 60 120

Turn-on delay time

t

d(on)

-14-ns

Rise time

t

r

-4-

Turn-off delay time

t

d(off)

-80-

Fall time

t

f

-13-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-2330nC

Gate to drain charge

Q

gd

-816

Gate charge total

Q

g

- 83 110

Gate plateau voltage

V

plateau

- 3.7 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 80 A

Diode pulse current

2)

I

S,pulse

- - 320

Diode forward voltage

V

SD

V

GS

=0V, I

F

=80A,

T

j

=25°C

0.6 0.95 1.3 V

Reverse recovery time

2)

t

rr

V

R

=30V, I

F

=80A,

di

F

/dt =100A/µs

-36-ns

Reverse recovery charge

2)

Q

rr

-41-nC

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f =1MHz

V

DD

=30V, V

GS

=10V,

I

D

=80A, R

G

=3.5Ω

V

DD

=48V, I

D

=80A,

V

GS

=0 to 10V

2)

Specified by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 1.4K/W the chip is able to carry 112A at 25°C.

Rev. 1.0 page 3 2009-03-24

P1-P3 P4-P6 P7-P9

IPB80N06S4L05ATMA2

Mfr. #:

Buy IPB80N06S4L05ATMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 60V 80A D2PAK-2

Lifecycle:

New from this manufacturer.

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