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TCET1200G

P1-P3P4-P6P7-P8
Document Number: 83501 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 02-Nov-10 1
Optocoupler, Phototransistor Output
TCET1200, TCET1200G
Vishay Semiconductors
DESCRIPTION
The TCET1200 consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin plastic dual inline package.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 V
RMS
)
• VDE 0804
Telecommunication apparatus and data processing
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
FEATURES
• High common mode rejection
• CTR offered in 5 groups
• Low temperature coefficient of CTR
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Reinforced isolation provides circuit protection against
electrical shock (safety class II)
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-2 (VDE 0884)
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• cUL tested to CSA 22.2 bulletin 5A, double protection
• BSI IEC 60950; IEC 60065 pending
• DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 (pending)
•FIMKO
Note
• G = leadform 10.16 mm; G is not marked on the body.
17918_14
V
DE
A
1
C
E
C
2
3
4
17197_4
ORDERING INFORMATION
TCET120#x
PART NUMBER PACKAGE
OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
5 mA 10 mA
UL, VDE, BSI, FIMKO 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320
DIP-4 TCET1200 TCET1201 TCET1202 TCET1203 TCET1204
DIP-4, 400 mil TCET1200G TCET1201G TCET1202G TCET1203G TCET1204G
10.16 mm
7.62 mm
DIP DIP, 400 mil
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83501
2 Rev. 1.7, 02-Nov-10
TCET1200, TCET1200G
Vishay Semiconductors
Optocoupler, Phototransistor Output
Notes
(1)
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
1.5 A
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
COUPLER
Isolation test voltage (RMS) V
ISO
5000 V
RMS
Total power dissipation P
tot
200 mW
Operating ambient temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector emitter cut-off current
V
CE
= 20 V, I
F
= 0 A,
E = 0
I
CEO
10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100 Ω
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.6 pF
Document Number: 83501 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 02-Nov-10 3
TCET1200, TCET1200G
Optocoupler, Phototransistor Output
Vishay Semiconductors
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2; IEC60747-5-5
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCET1200 CTR
50 600
%
TCET1200G CTR %
V
CE
= 5 V, I
F
= 10 mA
TCET1201 CTR
40 80
%
TCET1201G CTR %
TCET1202 CTR
63 125
%
TCET1202G CTR %
TCET1203 CTR
100 200
%
TCET1203G CTR %
TCET1204 CTR
160 320
%
TCET1204G CTR %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
pd
1.36 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
Rated impulse voltage V
IOTM
6kV
Max. working voltages Recurring peak voltage V
IORM
850 V
Forward current I
F
130 mA
Power dissipation P
diss
265 mW
Safety temperature T
si
150 °C
Creepage distance 7.6 mm
0 25 50 75 125
0
50
100
150
200
300
P
tot
- Total Power Dissipation (mW)
T
si
- Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
P
si
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P8

TCET1200G

Mfr. #:
Buy TCET1200G
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%
Lifecycle:
New from this manufacturer.
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