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MMBFJ310LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1 Publication Order Number:
MMBFJ309LT1/D
MMBFJ309L, MMBFJ310L,
SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
• Drain and Source are Interchangeable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Gate−Source Voltage V
GS
25 Vdc
Gate Current I
G
10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
SOT−23 (TO−236)
CASE 318
STYLE 10
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBFJ309LT1G,
SMMBFJ309LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
1
2
3
MMBFJ310LT1G,
SMMBFJ310LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
6x M G
G
6x = Device Code
x = U for MMBFJ309L, SMMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
SMMBFJ310LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
www.onsemi.com
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= −1.0 mAdc, V
DS
= 0)
V
(BR)GSS
−25 − − Vdc
Gate Reverse Current (V
GS
= −15 Vdc)
Gate Reverse Current (V
GS
= −15 Vdc, T
A
= 125°C)
I
GSS
−
−
−
−
−1.0
−1.0
nAdc
mAdc
Gate Source Cutoff Voltage MMBFJ309
(V
DS
= 10 Vdc, I
D
= 1.0 nAdc) MMBFJ310, SMMBFJ310
V
GS(off)
−1.0
−2.0
−
−
−4.0
−6.5
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current MMBFJ309
(V
DS
= 10 Vdc, V
GS
= 0) MMBFJ310, SMMBFJ310
I
DSS
12
24
−
−
30
60
mAdc
Gate−Source Forward Voltage
(I
G
= 1.0 mAdc, V
DS
= 0)
V
GS(f)
− − 1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|Y
fs
| 8.0 − 18 mmhos
Output Admittance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|y
os
| − − 250
mmhos
Input Capacitance
(V
GS
= −10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
C
iss
− − 5.0 pF
Reverse Transfer Capacitance
(V
GS
= −10 Vdc, V
DS
= 0 Vdc, f = 1.0 MHz)
C
rss
− − 2.5 pF
Equivalent Short−Circuit Input Noise Voltage
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
e
n
− 10 −
nVń Hz
Ǹ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
3
70
60
50
40
30
20
, SATURATION DRAIN CURRENT (mA)
-5.0 -4.0 -3.0 -2.0
-1.0 0
I
D
- V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
I
DSS
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT (mA)I
D
I
DSS
- V
GS
, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
V
DS
= 10 V
I
DSS
+25°C
T
A
= -55°C
+25°C
+25°C
-55°C
+150°C
+150°C
I
D
, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
, FORWARD TRANSCONDUCTANCE ( mhos)Y
fs
μ
, OUTPUT ADMITTANCE ( mhos)Y
os
μ
V
GS(off)
= -2.3 V =
V
GS(off)
= -5.7 V =
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Y
fs
Y
fs
Y
os
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0 1.0 06.07.08.09.010
CAPACITANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
, ON RESISTANCE (OHMS)R
DS
R
DS
C
gs
C
gd
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
P1-P3P4-P5

MMBFJ310LT1G

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Manufacturer:
ON Semiconductor
Description:
JFET 25V 10mA
Lifecycle:
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