IRF9Z10PBF Datasheet IRF9Z10PBF, IRF9Z10 | P4-P6

www.vishay.com Document Number: 90118

4 S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF9Z10, SiHF9Z10

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

600

480

360

0

120

240

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

90118_05

Q

G

, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

3

15

129

6

V

DS

= - 30 V

For test circuit

see figure 13

V

DS

= - 48 V

90118_06

I

D

= - 6.7 A

10

1

10

0

- V

SD

, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

1.0

5.0

4.03.02.0

25 °C

175 °C

V

GS

= 0 V

90118_07

10

-1

6.0

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- V

DS

, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

T

C

= 25 °C

T

J

= 175 °C

Single Pulse

10

2

5

1

2

5

10

2

1

5

10 10

2

25

90118_08

Document Number: 90118 www.vishay.com

S11-0511-Rev. B, 21-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF9Z10, SiHF9Z10

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

- I

D

, Drain Current (A)

T

C

, Case Temperature (°C)

0.0

1.5

3.0

4.5

6.0

7.5

90118_09

15025 1251007550

175

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t

1

, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1

/t

2

2. Peak T

j

= P

DM

x Z

thJC

+ T

C

Single Pulse

(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

90118_11

0.10

www.vishay.com Document Number: 90118

6 S11-0511-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF9Z10, SiHF9Z10

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

- 10 V

Vary t

p

to obtain

required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

500

0

100

200

300

400

Starting T

J

, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

- 2.7 A

- 4.7 A

- 6.7 A

V

DD

= - 25 V

90118_12c

25 150

125

10075

50

175

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

D.U.T.

- 3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRF9Z10PBF

IRF9Z10PBF

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