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PHPT60606PYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
PHPT60606PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 December 2014 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -60 V
V
CEO
collector-emitter voltage open base - -60 V
V
EBO
emitter-base voltage open collector - -8 V
I
C
collector current - -6 A
I
CM
peak collector current t
p
≤ 1 ms; pulsed - -12 A
I
B
base current - -800 mA
I
BM
peak base current t
p
≤ 1 ms; pulsed - -1.2 A
[1] - 1.35 W
[2] - 3.25 W
[3] - 5 W
P
tot
total power dissipation T
amb
≤ 25 °C
[4] - 25 W
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[4] Power dissipation from junction to mounting base.
T
amb
(°C)
-75 22512525
aaa-014785
2
4
6
P
tot
(W)
0
(1)
(2)
(3)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
PHPT60606PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 December 2014 4 / 15
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 111 K/W
[2] - - 46 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 30 K/W
R
th(j-mb)
thermal resistance
from junction to
mounting base
- - 6 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
y
c
y
c
e
=
1
0
.
0
.
0
2
0
.
7
5
0
.
5
0
.
3
3
0
.
2
0
.
1
0
.
0
5
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
aaa-014786
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
PHPT60606PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 December 2014 5 / 15
aaa-014787
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
-1
duty cycle = 1
0.05
0.1
0.02
0.01
0
0.2
0.33
0.5
0.75
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -48 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -48 V; I
E
= 0 A; T
j
= 150 °C - - -50 µA
I
CES
collector-emitter cut-off
current
V
CE
= -48 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -8 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -2 V; I
C
= -500 mA; T
amb
= 25 °C 120 200 -
V
CE
= -2 V; I
C
= -1 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
110 180 -
V
CE
= -2 V; I
C
= -3 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
60 100 -
h
FE
DC current gain
V
CE
= -2 V; I
C
= -6 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
20 30 -
I
C
= -1 A; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
- -75 -110 mV
I
C
= -3 A; I
B
= -300 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
- -155 -230 mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -6 A; I
B
= -600 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- -395 -525 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -6 A; I
B
= -600 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 66 88 mΩ
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PHPT60606PYX

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 6A PNP high pwr bipolar transistor
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