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NCS5000SNT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 6
1 Publication Order Number:
NCS5000/D
NCS5000
Integrated RF Schottky
Detector
The NCS5000 is an integrated Schottky detector intended for use as
a level detector in RF measurement/power control applications such as
those found in GSM handsets. The detector converts the peak RF
voltage applied to a DC level. The circuit consists of an RF Schottky
detector, a reference Schottky diode, as well as biasing and control
circuitry. There is an enable input that allows the part to be placed in a
low power state when not in use.
The detector is designed for operation up to 2.0 GHz and can operate
with input power levels up to +25 dBm. There is a fixed offset of 10 mV
(nominal) between the Reference Detector and the RF Detector under
no applied RF. The two detectors are monolithically integrated so that
they closely track overtemperature, voltage and process.
The NCS5000 is housed in a very small TSOP−6 package ideal for
portable applications. The TSOP−6 package is a lower profile,
footprint compatible package to the SOT23−6.
Features
• Wide Operating Frequency Range to 2.0 GHz
• 2.7 V − 5.5 V Operating Voltage
• Very Low Operating Current of 300 mA
• Enable Control to Place the Part in a Low Current Standby Mode
• Typical Standby Current of < 1.0 mA
• −40°C to 85°C Operating Temperature Range
• Very Small TSOP−6 Package
• Pb−Free Package is Available
Typical Applications
• Cellular Handsets (GSM and DCS1800/PCS1900)
• Wireless Data Modems
• Transmitter Power Measurement and Control
• Test Equipment
Enable
Compensated
Current Sources
RF_In
DET_OUT
REF
V
CC
GND
This circuit has 28 active transistors
Figure 1.
PIN CONNECTIONS AND
MARKING DIAGRAM
1
3
RF_In
DET_OUT
2V
CC
Enable
4
REF
6
(Top View)
TSOP−6
SN SUFFIX
CASE 318G
Device Package Shipping
†
ORDERING INFORMATION
NCS5000SNT1 TSOP−6 3000/Tape & Ree
l
5
GND
BACAYWG
G
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
BAC = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
NCS5000SNT1G TSOP−6
(Pb−Free)
3000/Tape & Ree
l
(Note: Microdot may be in either location)
NCS5000
http://onsemi.com
2
PIN DESCRIPTION
Pin Name Description
1 DET_OUT This is the RF Detector Output. This signal is proportional to the peak RF voltage applied at the RF_In pin.
2 V
CC
Input power supply.
3 Enable Control signal to turn on and off the device. If this signal is not used, this pin should be connected directly
to V
CC
. A logic high on this input turns on the device.
4 RF_In This is the input to the RF detector. The signal must be AC−coupled into this input with a good quality RF capacitor.
5 GND Ground.
6 REF This is the reference detector output. Nominal this signal is 10 mV higher than DET_OUT when no RF signal is
applied at RF_In.
MAXIMUM RATINGS (T
A
= 25°C, unless otherwise noted.)
Rating Symbol Value Unit
Maximum Input Power on RF Pin PMAX 28 dBm
Maximum Power Supply VCCMAX 6.0 V
ESD Rating for RF_In (HBM) All Other Pins are 2.5 kV (HBM) − 500 V
Storage Temperature Range T
stg
−40 to +125 °C
Maximum Junction Temperature T
J
+150 °C
Maximum Input Voltage on Pins VIMAX V
CC
+ 0.3 V −
Minimum Input Voltage on Pins VIMIN −0.3 V −
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Characteristic Symbol Min Typ Max Unit
RF Input (50 W Equivalent)
RF
in
− − 25 dBm
Supply Voltage V
CC
2.7 − 5.5 V
Operating Temperature Range T
A
−40 − 85 °C
NCS5000
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 2.8 V, for typical values; Min and Max values at T
A
= 25°C)
Characteristic Symbol Pin Min Typ Max Unit
RF Operating Frequency − 4 100 − 2000 MHz
Operating Current Consumption
(V
enable
= 2.4 V, No RF Applied)
I
CC
(op) 2 − − 500
mA
Standby Current Consumption
(V
enable
= 0.4 V, No RF Applied)
I
CC
(stby) 2 − 1 10
mA
Power Supply Ripple Rejection
(V
CC
= 3.6 V, V
ripple
= 0.5 V
PP
, No RF) 1 kHz
10 kHz
R
R
2
−
−
56
41
−
−
dB
Detector Output (No RF Applied) DET_OUT 1 40 45 50 mV
Reference Output (No RF Applied) REF 6 50 55 60 mV
Reference − Detector Output Differential Voltage
(No RF Applied)
REF−
DET_OUT
1,6 5 10 15 mV
Detector Output
F
in
= 1.0 GHz, RF
in
= −5.0 dBm (50 W)
F
in
= 1.0 GHz, RF
in
= 5.0 dBm (50 W)
F
in
= 1.0 GHz, RF
in
= 15 dBm (50 W)
− −
−
−
−
100
335
1285
−
−
−
mV
Enable Logic High V
ih
3 2.4 − − V
Enable Logic Low V
il
3 0 − 0.4 V
Enable Input Current, V
CC
= 2.7 V, V
enable
= 2.4 V I
in
3 0 − 30
mA
Note: The RF signal must be AC−coupled into the RF_In pin
−
+
−
+
Compensated
Current Sources
RF_In
V
CC
GND
Enable
DET_OUT
REF
NCS5000
20 dB
Coupler
Power
Amplifier
APC
RF
in
RF
out
MCU
Port
NCP500
2.8 V LDO
V
bat
V
bat
Ramp
Control
(DAC)
Figure 2. Typical Application Block Diagram
Control
Input
P1-P3P4-P6

NCS5000SNT1

Mfr. #:
Buy NCS5000SNT1
Manufacturer:
ON Semiconductor
Description:
IC RF DETECT 100MHZ-2GHZ 6TSOP
Lifecycle:
New from this manufacturer.
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