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NUF2230XV6T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev.3
1 Publication Order Number:
NUF2230XV6/D
NUF2230XV6
2 Line EMI Filter with ESD
Protection
This device is a 2 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 900 MHz. It also offers ESD protection−clamping
transients from static discharges. ESD protection is provided across all
capacitors.
Features
• EMI Filtering and ESD Protection
• Integration of 10 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
> 8.0 kV (Contact)
• SOT−563 Package
• Moisture Sensitivity Level 1
• ESD Ratings: Machine Model = C
Human Body Model = 3B
• These are Pb−Free Devices
Benefits
• Reduces EMI/RFI Emissions on a Data Line
• Integrated Solution Offers Cost and Space Savings in a
SOT−563 Package
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
• Integrated Solution Improves System Reliability
Applications
• EMI Filtering and ESD Protection for Data Lines
• Wireless Phones
• PDAs and Handheld Products
• Notebook Computers
• LCD Displays
SOT−563
CASE 463A
MARKING
DIAGRAM
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NUF2230XV6T1 SOT−563 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
Pin 6
D(2)
Pin 5
GND
Pin 4
O(2)
Pin 1
D(1)
Pin 2
GND
Pin 3
O(1)
23 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
23 M G
G
1
1
6
NUF2230XV6T1G SOT−563 4000/Tape & Reel
NUF2230XV6
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
ESD Discharge IEC61000−4−2
Air Discharge
Contact Discharge
V
PP
15
8.0
kV
Steady−State Power per Resistor P
R
mW
Steady−State Power per Package P
T
mW
Operating Temperature Range T
OP
−40 to 85 °C
Storage Temperature Range T
STG
−55 to 150 °C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T
L
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage V
RWM
5.0 V
Breakdown Voltage V
BR
I
R
= 1.0 mA 6.0 7.0 V
Leakage Current I
R
V
RWM
= 3.0 V 1.0
A
Resistance R
A
I
R
= 20 mA 90 100 110
Capacitance (Notes 1 and 2) Cd V
R
= 2.5 V, f = 1.0 MHz 16 pF
Cut−Off Frequency (Note 3) f
3dB
Above this frequency,
appreciable attenuation occurs
125 MHz
1. Measured at 25°C, V
R
= 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50 load termination.
NUF2230XV6
http://onsemi.com
3
−35
−30
−25
−20
−15
−10
−5
0
1.E+06 1.E+07 1.E+08 1.E+09 1.E+10
FREQUENCY (Hz)
S21 (dB)
Figure 1. Insertion Loss Characteristic
(50 W Source and 50 W Lead Termination)
REVERSE VOLTAGE (V)
0
0.5
1
1.5
2
012345
Figure 2. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
90
92
94
96
98
100
102
104
106
108
110
−40 −20 0 20 40 60 80
Figure 3. Typical Resistance over Temperature
TEMPERATURE (°C)
RESISTANCE ()
NORMALIZED CAPACITANCE
P1-P3P4-P4

NUF2230XV6T1G

Mfr. #:
Buy NUF2230XV6T1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors MI 40PF 2CH EMI FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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